Enhanced Field Electron Emission From Zinc-Doped CuO Nanowires
Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those us...
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| Veröffentlicht in: | IEEE electron device letters 2012-06, Vol.33 (6), p.887-889 |
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| creator | Tsung-Ying Tsai Cheng-Liang Hsu Shoou-Jinn Chang Chen, Szu-I Han-Ting Hsueh Ting-Jen Hsueh |
| description | Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs. |
| doi_str_mv | 10.1109/LED.2012.2190037 |
| format | Article |
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The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2012.2190037</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Approximation ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Copper ; Cross-disciplinary physics: materials science; rheology ; CuO nanowires (NWs) ; Devices ; Doping ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronics ; Emitters ; Exact sciences and technology ; field electron emission ; Glass ; Materials science ; Nanoscale materials and structures: fabrication and characterization ; Nanowires ; Physics ; Quantum wires ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Substrates ; Surface double layers, schottky barriers, and work functions ; Thresholds ; Vacuum microelectronics ; Work functions ; Zinc ; zinc doped ; Zinc oxide</subject><ispartof>IEEE electron device letters, 2012-06, Vol.33 (6), p.887-889</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-ac6bac6cbbda5fc18384cbbaf1377c09545a4cca5f91488d05bc58eebb333eae3</citedby><cites>FETCH-LOGICAL-c354t-ac6bac6cbbda5fc18384cbbaf1377c09545a4cca5f91488d05bc58eebb333eae3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6184273$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6184273$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25949698$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tsung-Ying Tsai</creatorcontrib><creatorcontrib>Cheng-Liang Hsu</creatorcontrib><creatorcontrib>Shoou-Jinn Chang</creatorcontrib><creatorcontrib>Chen, Szu-I</creatorcontrib><creatorcontrib>Han-Ting Hsueh</creatorcontrib><creatorcontrib>Ting-Jen Hsueh</creatorcontrib><title>Enhanced Field Electron Emission From Zinc-Doped CuO Nanowires</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.</description><subject>Applied sciences</subject><subject>Approximation</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Copper</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>CuO nanowires (NWs)</subject><subject>Devices</subject><subject>Doping</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronics</subject><subject>Emitters</subject><subject>Exact sciences and technology</subject><subject>field electron emission</subject><subject>Glass</subject><subject>Materials science</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanowires</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Substrates</subject><subject>Surface double layers, schottky barriers, and work functions</subject><subject>Thresholds</subject><subject>Vacuum microelectronics</subject><subject>Work functions</subject><subject>Zinc</subject><subject>zinc doped</subject><subject>Zinc oxide</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1LAzEQQIMoWKt3wcuCCF62JpuPTS6CtFsVir3oxUvIZmcxZbupSRfx35vS0oOHMBnmzTDzELomeEIIVg-LajYpMCkmBVEY0_IEjQjnMsdc0FM0wiUjOSVYnKOLGFcYE8ZKNkKPVf9legtNNnfQNVnVgd0G32fV2sXo0mce_Dr7dL3NZ36TuOmwzN5M739cgHiJzlrTRbg6xDH6mFfv05d8sXx-nT4tcks52-bGijo9W9eN4a0lkkqWEtMSWpYWK864YdammiJMygbz2nIJUNeUUjBAx-h-P3cT_PcAcavTeha6zvTgh6gJFZzwcnfsGN3-Q1d-CH3aThNcCCG4VCxReE_Z4GMM0OpNcGsTfhOkd0J1Eqp3QvVBaGq5Oww20ZquDcmbi8e-giumhJKJu9lzDgCOZUEkK0pK_wCaYH0m</recordid><startdate>20120601</startdate><enddate>20120601</enddate><creator>Tsung-Ying Tsai</creator><creator>Cheng-Liang Hsu</creator><creator>Shoou-Jinn Chang</creator><creator>Chen, Szu-I</creator><creator>Han-Ting Hsueh</creator><creator>Ting-Jen Hsueh</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Substrates</topic><topic>Surface double layers, schottky barriers, and work functions</topic><topic>Thresholds</topic><topic>Vacuum microelectronics</topic><topic>Work functions</topic><topic>Zinc</topic><topic>zinc doped</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsung-Ying Tsai</creatorcontrib><creatorcontrib>Cheng-Liang Hsu</creatorcontrib><creatorcontrib>Shoou-Jinn Chang</creatorcontrib><creatorcontrib>Chen, Szu-I</creatorcontrib><creatorcontrib>Han-Ting Hsueh</creatorcontrib><creatorcontrib>Ting-Jen Hsueh</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsung-Ying Tsai</au><au>Cheng-Liang Hsu</au><au>Shoou-Jinn Chang</au><au>Chen, Szu-I</au><au>Han-Ting Hsueh</au><au>Ting-Jen Hsueh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced Field Electron Emission From Zinc-Doped CuO Nanowires</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2012-06-01</date><risdate>2012</risdate><volume>33</volume><issue>6</issue><spage>887</spage><epage>889</epage><pages>887-889</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2012.2190037</doi><tpages>3</tpages></addata></record> |
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| subjects | Applied sciences Approximation Condensed matter: electronic structure, electrical, magnetic, and optical properties Copper Cross-disciplinary physics: materials science rheology CuO nanowires (NWs) Devices Doping Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Emitters Exact sciences and technology field electron emission Glass Materials science Nanoscale materials and structures: fabrication and characterization Nanowires Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Surface double layers, schottky barriers, and work functions Thresholds Vacuum microelectronics Work functions Zinc zinc doped Zinc oxide |
| title | Enhanced Field Electron Emission From Zinc-Doped CuO Nanowires |
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