Enhanced Field Electron Emission From Zinc-Doped CuO Nanowires

Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those us...

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Veröffentlicht in:	IEEE electron device letters 2012-06, Vol.33 (6), p.887-889
Hauptverfasser:	Tsung-Ying Tsai, Cheng-Liang Hsu, Shoou-Jinn Chang, Chen, Szu-I, Han-Ting Hsueh, Ting-Jen Hsueh
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Approximation Condensed matter: electronic structure, electrical, magnetic, and optical properties Copper Cross-disciplinary physics: materials science rheology CuO nanowires (NWs) Devices Doping Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Emitters Exact sciences and technology field electron emission Glass Materials science Nanoscale materials and structures: fabrication and characterization Nanowires Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Surface double layers, schottky barriers, and work functions Thresholds Vacuum microelectronics Work functions Zinc zinc doped Zinc oxide
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Zusammenfassung:	Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2012.2190037