A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface

This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signalin...

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Veröffentlicht in:IEEE journal of solid-state circuits 2012-04, Vol.47 (4), p.926-937
Hauptverfasser: Kaviani, K., Ting Wu, Wei, J., Amirkhany, A., Jie Shen, Chin, T. J., Thakkar, C., Beyene, W. T., Chan, N., Chen, C., Bing Ren Chuang, Dressler, D., Gadde, V. P., Hekmat, M., Ho, E., Huang, C., Phuong Le, Mahabaleshwara, Madden, C., Mishra, N. K., Raghavan, L., Saito, K., Schmitt, R., Secker, D., Xudong Shi, Fazeel, S., Srinivas, G. S., Zhang, S., Tran, C., Vaidyanath, A., Vyas, K., Jain, M., Kun-Yung Ken Chang, Xingchao Yuan
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container_end_page 937
container_issue 4
container_start_page 926
container_title IEEE journal of solid-state circuits
container_volume 47
creator Kaviani, K.
Ting Wu
Wei, J.
Amirkhany, A.
Jie Shen
Chin, T. J.
Thakkar, C.
Beyene, W. T.
Chan, N.
Chen, C.
Bing Ren Chuang
Dressler, D.
Gadde, V. P.
Hekmat, M.
Ho, E.
Huang, C.
Phuong Le
Mahabaleshwara
Madden, C.
Mishra, N. K.
Raghavan, L.
Saito, K.
Schmitt, R.
Secker, D.
Xudong Shi
Fazeel, S.
Srinivas, G. S.
Zhang, S.
Tran, C.
Vaidyanath, A.
Vyas, K.
Jain, M.
Kun-Yung Ken Chang
Xingchao Yuan
description This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package change. The compact, low-power and high-speed tri-modal interface is enabled by substantial reuse of the circuit elements among various signaling modes, particularly in the wide-band clock generation and distribution system and the multi-modal driver output stage, as well as the use of fast equalization for post-cursor intersymbol interference (ISI) mitigation. In the high-speed differential mode, the system utilizes a 1-tap transmit equalizer during a WRITE operation to the memory. In contrast, during a memory READ operation, it employs a linear equalizer (LEQ) with 3 dB of peaking as well as a calibrated high-speed 1-tap predictive decision feedback equalizer (prDFE), while no transmitter equalization is assumed for the memory. The prototype tri-modal interface implemented in a 40-nm CMOS process, consists of 16 data links and achieves more than 2.5 × energy-efficient memory transactions at 16 Gbps compared to a previous single-mode generation.
doi_str_mv 10.1109/JSSC.2012.2185370
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_pascalfrancis_primary_25862515</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6164279</ieee_id><sourcerecordid>2626351061</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-dbe8e01e0c8d6dc096114422c0a10e2e8e859e64a36ac1d1a4d625af551a012f3</originalsourceid><addsrcrecordid>eNpdkEFLAzEQhYMoWKs_QLwsguBlu5lks5scS6u10iLYCt6WNDuBrdvdmmwP_femtPTgZYZhvnm8eYTcAx0AUJW8LxajAaPABgyk4Dm9ID0QQsaQ8-9L0qMUZKwYpdfkxvt1GNNUQo8Mh9HSVfG8LXUdMRpPVlufzKrmJxpX1qLDpqt0nYzHnzyZhCqiOW5at4-mTYfOaoO35Mrq2uPdqffJ1-vLcvQWzz4m09FwFhsuRBeXK5RIAamRZVYaqjIIFhgzVANFFpZSKMxSzTNtoASdlhkT2goBOrxleZ88H3W3rv3doe-KTeUN1rVusN35AihjUoFSMqCP_9B1u3NNcFeoLAUBMucBgiNkXOu9Q1tsXbXRbh-UikOmxSHT4pBpcco03DydhLU3urZON6by50MmZPAMInAPR65CxPM6gyxlueJ_Tp57hA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>964151873</pqid></control><display><type>article</type><title>A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface</title><source>IEEE Electronic Library (IEL)</source><creator>Kaviani, K. ; Ting Wu ; Wei, J. ; Amirkhany, A. ; Jie Shen ; Chin, T. J. ; Thakkar, C. ; Beyene, W. T. ; Chan, N. ; Chen, C. ; Bing Ren Chuang ; Dressler, D. ; Gadde, V. P. ; Hekmat, M. ; Ho, E. ; Huang, C. ; Phuong Le ; Mahabaleshwara ; Madden, C. ; Mishra, N. K. ; Raghavan, L. ; Saito, K. ; Schmitt, R. ; Secker, D. ; Xudong Shi ; Fazeel, S. ; Srinivas, G. S. ; Zhang, S. ; Tran, C. ; Vaidyanath, A. ; Vyas, K. ; Jain, M. ; Kun-Yung Ken Chang ; Xingchao Yuan</creator><creatorcontrib>Kaviani, K. ; Ting Wu ; Wei, J. ; Amirkhany, A. ; Jie Shen ; Chin, T. J. ; Thakkar, C. ; Beyene, W. T. ; Chan, N. ; Chen, C. ; Bing Ren Chuang ; Dressler, D. ; Gadde, V. P. ; Hekmat, M. ; Ho, E. ; Huang, C. ; Phuong Le ; Mahabaleshwara ; Madden, C. ; Mishra, N. K. ; Raghavan, L. ; Saito, K. ; Schmitt, R. ; Secker, D. ; Xudong Shi ; Fazeel, S. ; Srinivas, G. S. ; Zhang, S. ; Tran, C. ; Vaidyanath, A. ; Vyas, K. ; Jain, M. ; Kun-Yung Ken Chang ; Xingchao Yuan</creatorcontrib><description>This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package change. The compact, low-power and high-speed tri-modal interface is enabled by substantial reuse of the circuit elements among various signaling modes, particularly in the wide-band clock generation and distribution system and the multi-modal driver output stage, as well as the use of fast equalization for post-cursor intersymbol interference (ISI) mitigation. In the high-speed differential mode, the system utilizes a 1-tap transmit equalizer during a WRITE operation to the memory. In contrast, during a memory READ operation, it employs a linear equalizer (LEQ) with 3 dB of peaking as well as a calibrated high-speed 1-tap predictive decision feedback equalizer (prDFE), while no transmitter equalization is assumed for the memory. The prototype tri-modal interface implemented in a 40-nm CMOS process, consists of 16 data links and achieves more than 2.5 × energy-efficient memory transactions at 16 Gbps compared to a previous single-mode generation.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2012.2185370</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Calibration ; Channels ; Circuit boards ; Circuit properties ; Circuits ; Circuits of signal characteristics conditioning (including delay circuits) ; clocking ; Clocks ; DDR ; decision feedback equalization ; Delay ; Design. Technologies. Operation analysis. Testing ; Drivers ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Equalization ; Equalizers ; Exact sciences and technology ; Feedback ; GDDR ; Generators ; High speed ; high-voltage protection ; Information storage ; Integrated circuits ; multi-standard memory interface ; multi-VCO PLL ; Multiplexing ; offset cancellation ; Oscillators, resonators, synthetizers ; Phase locked loops ; predictive DFE ; quadrature generator ; Random access memory ; Receivers ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>IEEE journal of solid-state circuits, 2012-04, Vol.47 (4), p.926-937</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Apr 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-dbe8e01e0c8d6dc096114422c0a10e2e8e859e64a36ac1d1a4d625af551a012f3</citedby><cites>FETCH-LOGICAL-c355t-dbe8e01e0c8d6dc096114422c0a10e2e8e859e64a36ac1d1a4d625af551a012f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6164279$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,315,782,786,791,792,798,23939,23940,25149,27933,27934,54767</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6164279$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=25862515$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kaviani, K.</creatorcontrib><creatorcontrib>Ting Wu</creatorcontrib><creatorcontrib>Wei, J.</creatorcontrib><creatorcontrib>Amirkhany, A.</creatorcontrib><creatorcontrib>Jie Shen</creatorcontrib><creatorcontrib>Chin, T. J.</creatorcontrib><creatorcontrib>Thakkar, C.</creatorcontrib><creatorcontrib>Beyene, W. T.</creatorcontrib><creatorcontrib>Chan, N.</creatorcontrib><creatorcontrib>Chen, C.</creatorcontrib><creatorcontrib>Bing Ren Chuang</creatorcontrib><creatorcontrib>Dressler, D.</creatorcontrib><creatorcontrib>Gadde, V. P.</creatorcontrib><creatorcontrib>Hekmat, M.</creatorcontrib><creatorcontrib>Ho, E.</creatorcontrib><creatorcontrib>Huang, C.</creatorcontrib><creatorcontrib>Phuong Le</creatorcontrib><creatorcontrib>Mahabaleshwara</creatorcontrib><creatorcontrib>Madden, C.</creatorcontrib><creatorcontrib>Mishra, N. K.</creatorcontrib><creatorcontrib>Raghavan, L.</creatorcontrib><creatorcontrib>Saito, K.</creatorcontrib><creatorcontrib>Schmitt, R.</creatorcontrib><creatorcontrib>Secker, D.</creatorcontrib><creatorcontrib>Xudong Shi</creatorcontrib><creatorcontrib>Fazeel, S.</creatorcontrib><creatorcontrib>Srinivas, G. S.</creatorcontrib><creatorcontrib>Zhang, S.</creatorcontrib><creatorcontrib>Tran, C.</creatorcontrib><creatorcontrib>Vaidyanath, A.</creatorcontrib><creatorcontrib>Vyas, K.</creatorcontrib><creatorcontrib>Jain, M.</creatorcontrib><creatorcontrib>Kun-Yung Ken Chang</creatorcontrib><creatorcontrib>Xingchao Yuan</creatorcontrib><title>A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package change. The compact, low-power and high-speed tri-modal interface is enabled by substantial reuse of the circuit elements among various signaling modes, particularly in the wide-band clock generation and distribution system and the multi-modal driver output stage, as well as the use of fast equalization for post-cursor intersymbol interference (ISI) mitigation. In the high-speed differential mode, the system utilizes a 1-tap transmit equalizer during a WRITE operation to the memory. In contrast, during a memory READ operation, it employs a linear equalizer (LEQ) with 3 dB of peaking as well as a calibrated high-speed 1-tap predictive decision feedback equalizer (prDFE), while no transmitter equalization is assumed for the memory. The prototype tri-modal interface implemented in a 40-nm CMOS process, consists of 16 data links and achieves more than 2.5 × energy-efficient memory transactions at 16 Gbps compared to a previous single-mode generation.</description><subject>Applied sciences</subject><subject>Calibration</subject><subject>Channels</subject><subject>Circuit boards</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Circuits of signal characteristics conditioning (including delay circuits)</subject><subject>clocking</subject><subject>Clocks</subject><subject>DDR</subject><subject>decision feedback equalization</subject><subject>Delay</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Drivers</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Equalization</subject><subject>Equalizers</subject><subject>Exact sciences and technology</subject><subject>Feedback</subject><subject>GDDR</subject><subject>Generators</subject><subject>High speed</subject><subject>high-voltage protection</subject><subject>Information storage</subject><subject>Integrated circuits</subject><subject>multi-standard memory interface</subject><subject>multi-VCO PLL</subject><subject>Multiplexing</subject><subject>offset cancellation</subject><subject>Oscillators, resonators, synthetizers</subject><subject>Phase locked loops</subject><subject>predictive DFE</subject><subject>quadrature generator</subject><subject>Random access memory</subject><subject>Receivers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEFLAzEQhYMoWKs_QLwsguBlu5lks5scS6u10iLYCt6WNDuBrdvdmmwP_femtPTgZYZhvnm8eYTcAx0AUJW8LxajAaPABgyk4Dm9ID0QQsaQ8-9L0qMUZKwYpdfkxvt1GNNUQo8Mh9HSVfG8LXUdMRpPVlufzKrmJxpX1qLDpqt0nYzHnzyZhCqiOW5at4-mTYfOaoO35Mrq2uPdqffJ1-vLcvQWzz4m09FwFhsuRBeXK5RIAamRZVYaqjIIFhgzVANFFpZSKMxSzTNtoASdlhkT2goBOrxleZ88H3W3rv3doe-KTeUN1rVusN35AihjUoFSMqCP_9B1u3NNcFeoLAUBMucBgiNkXOu9Q1tsXbXRbh-UikOmxSHT4pBpcco03DydhLU3urZON6by50MmZPAMInAPR65CxPM6gyxlueJ_Tp57hA</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Kaviani, K.</creator><creator>Ting Wu</creator><creator>Wei, J.</creator><creator>Amirkhany, A.</creator><creator>Jie Shen</creator><creator>Chin, T. J.</creator><creator>Thakkar, C.</creator><creator>Beyene, W. T.</creator><creator>Chan, N.</creator><creator>Chen, C.</creator><creator>Bing Ren Chuang</creator><creator>Dressler, D.</creator><creator>Gadde, V. P.</creator><creator>Hekmat, M.</creator><creator>Ho, E.</creator><creator>Huang, C.</creator><creator>Phuong Le</creator><creator>Mahabaleshwara</creator><creator>Madden, C.</creator><creator>Mishra, N. K.</creator><creator>Raghavan, L.</creator><creator>Saito, K.</creator><creator>Schmitt, R.</creator><creator>Secker, D.</creator><creator>Xudong Shi</creator><creator>Fazeel, S.</creator><creator>Srinivas, G. S.</creator><creator>Zhang, S.</creator><creator>Tran, C.</creator><creator>Vaidyanath, A.</creator><creator>Vyas, K.</creator><creator>Jain, M.</creator><creator>Kun-Yung Ken Chang</creator><creator>Xingchao Yuan</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20120401</creationdate><title>A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface</title><author>Kaviani, K. ; Ting Wu ; Wei, J. ; Amirkhany, A. ; Jie Shen ; Chin, T. J. ; Thakkar, C. ; Beyene, W. T. ; Chan, N. ; Chen, C. ; Bing Ren Chuang ; Dressler, D. ; Gadde, V. P. ; Hekmat, M. ; Ho, E. ; Huang, C. ; Phuong Le ; Mahabaleshwara ; Madden, C. ; Mishra, N. K. ; Raghavan, L. ; Saito, K. ; Schmitt, R. ; Secker, D. ; Xudong Shi ; Fazeel, S. ; Srinivas, G. S. ; Zhang, S. ; Tran, C. ; Vaidyanath, A. ; Vyas, K. ; Jain, M. ; Kun-Yung Ken Chang ; Xingchao Yuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-dbe8e01e0c8d6dc096114422c0a10e2e8e859e64a36ac1d1a4d625af551a012f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Calibration</topic><topic>Channels</topic><topic>Circuit boards</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>Circuits of signal characteristics conditioning (including delay circuits)</topic><topic>clocking</topic><topic>Clocks</topic><topic>DDR</topic><topic>decision feedback equalization</topic><topic>Delay</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Drivers</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Equalization</topic><topic>Equalizers</topic><topic>Exact sciences and technology</topic><topic>Feedback</topic><topic>GDDR</topic><topic>Generators</topic><topic>High speed</topic><topic>high-voltage protection</topic><topic>Information storage</topic><topic>Integrated circuits</topic><topic>multi-standard memory interface</topic><topic>multi-VCO PLL</topic><topic>Multiplexing</topic><topic>offset cancellation</topic><topic>Oscillators, resonators, synthetizers</topic><topic>Phase locked loops</topic><topic>predictive DFE</topic><topic>quadrature generator</topic><topic>Random access memory</topic><topic>Receivers</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kaviani, K.</creatorcontrib><creatorcontrib>Ting Wu</creatorcontrib><creatorcontrib>Wei, J.</creatorcontrib><creatorcontrib>Amirkhany, A.</creatorcontrib><creatorcontrib>Jie Shen</creatorcontrib><creatorcontrib>Chin, T. J.</creatorcontrib><creatorcontrib>Thakkar, C.</creatorcontrib><creatorcontrib>Beyene, W. T.</creatorcontrib><creatorcontrib>Chan, N.</creatorcontrib><creatorcontrib>Chen, C.</creatorcontrib><creatorcontrib>Bing Ren Chuang</creatorcontrib><creatorcontrib>Dressler, D.</creatorcontrib><creatorcontrib>Gadde, V. P.</creatorcontrib><creatorcontrib>Hekmat, M.</creatorcontrib><creatorcontrib>Ho, E.</creatorcontrib><creatorcontrib>Huang, C.</creatorcontrib><creatorcontrib>Phuong Le</creatorcontrib><creatorcontrib>Mahabaleshwara</creatorcontrib><creatorcontrib>Madden, C.</creatorcontrib><creatorcontrib>Mishra, N. K.</creatorcontrib><creatorcontrib>Raghavan, L.</creatorcontrib><creatorcontrib>Saito, K.</creatorcontrib><creatorcontrib>Schmitt, R.</creatorcontrib><creatorcontrib>Secker, D.</creatorcontrib><creatorcontrib>Xudong Shi</creatorcontrib><creatorcontrib>Fazeel, S.</creatorcontrib><creatorcontrib>Srinivas, G. S.</creatorcontrib><creatorcontrib>Zhang, S.</creatorcontrib><creatorcontrib>Tran, C.</creatorcontrib><creatorcontrib>Vaidyanath, A.</creatorcontrib><creatorcontrib>Vyas, K.</creatorcontrib><creatorcontrib>Jain, M.</creatorcontrib><creatorcontrib>Kun-Yung Ken Chang</creatorcontrib><creatorcontrib>Xingchao Yuan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kaviani, K.</au><au>Ting Wu</au><au>Wei, J.</au><au>Amirkhany, A.</au><au>Jie Shen</au><au>Chin, T. J.</au><au>Thakkar, C.</au><au>Beyene, W. T.</au><au>Chan, N.</au><au>Chen, C.</au><au>Bing Ren Chuang</au><au>Dressler, D.</au><au>Gadde, V. P.</au><au>Hekmat, M.</au><au>Ho, E.</au><au>Huang, C.</au><au>Phuong Le</au><au>Mahabaleshwara</au><au>Madden, C.</au><au>Mishra, N. K.</au><au>Raghavan, L.</au><au>Saito, K.</au><au>Schmitt, R.</au><au>Secker, D.</au><au>Xudong Shi</au><au>Fazeel, S.</au><au>Srinivas, G. S.</au><au>Zhang, S.</au><au>Tran, C.</au><au>Vaidyanath, A.</au><au>Vyas, K.</au><au>Jain, M.</au><au>Kun-Yung Ken Chang</au><au>Xingchao Yuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2012-04-01</date><risdate>2012</risdate><volume>47</volume><issue>4</issue><spage>926</spage><epage>937</epage><pages>926-937</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package change. The compact, low-power and high-speed tri-modal interface is enabled by substantial reuse of the circuit elements among various signaling modes, particularly in the wide-band clock generation and distribution system and the multi-modal driver output stage, as well as the use of fast equalization for post-cursor intersymbol interference (ISI) mitigation. In the high-speed differential mode, the system utilizes a 1-tap transmit equalizer during a WRITE operation to the memory. In contrast, during a memory READ operation, it employs a linear equalizer (LEQ) with 3 dB of peaking as well as a calibrated high-speed 1-tap predictive decision feedback equalizer (prDFE), while no transmitter equalization is assumed for the memory. The prototype tri-modal interface implemented in a 40-nm CMOS process, consists of 16 data links and achieves more than 2.5 × energy-efficient memory transactions at 16 Gbps compared to a previous single-mode generation.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2012.2185370</doi><tpages>12</tpages></addata></record>
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ispartof IEEE journal of solid-state circuits, 2012-04, Vol.47 (4), p.926-937
issn 0018-9200
1558-173X
language eng
recordid cdi_pascalfrancis_primary_25862515
source IEEE Electronic Library (IEL)
subjects Applied sciences
Calibration
Channels
Circuit boards
Circuit properties
Circuits
Circuits of signal characteristics conditioning (including delay circuits)
clocking
Clocks
DDR
decision feedback equalization
Delay
Design. Technologies. Operation analysis. Testing
Drivers
Electric, optical and optoelectronic circuits
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Equalization
Equalizers
Exact sciences and technology
Feedback
GDDR
Generators
High speed
high-voltage protection
Information storage
Integrated circuits
multi-standard memory interface
multi-VCO PLL
Multiplexing
offset cancellation
Oscillators, resonators, synthetizers
Phase locked loops
predictive DFE
quadrature generator
Random access memory
Receivers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface
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