A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface
This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signalin...
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creator | Kaviani, K. Ting Wu Wei, J. Amirkhany, A. Jie Shen Chin, T. J. Thakkar, C. Beyene, W. T. Chan, N. Chen, C. Bing Ren Chuang Dressler, D. Gadde, V. P. Hekmat, M. Ho, E. Huang, C. Phuong Le Mahabaleshwara Madden, C. Mishra, N. K. Raghavan, L. Saito, K. Schmitt, R. Secker, D. Xudong Shi Fazeel, S. Srinivas, G. S. Zhang, S. Tran, C. Vaidyanath, A. Vyas, K. Jain, M. Kun-Yung Ken Chang Xingchao Yuan |
description | This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package change. The compact, low-power and high-speed tri-modal interface is enabled by substantial reuse of the circuit elements among various signaling modes, particularly in the wide-band clock generation and distribution system and the multi-modal driver output stage, as well as the use of fast equalization for post-cursor intersymbol interference (ISI) mitigation. In the high-speed differential mode, the system utilizes a 1-tap transmit equalizer during a WRITE operation to the memory. In contrast, during a memory READ operation, it employs a linear equalizer (LEQ) with 3 dB of peaking as well as a calibrated high-speed 1-tap predictive decision feedback equalizer (prDFE), while no transmitter equalization is assumed for the memory. The prototype tri-modal interface implemented in a 40-nm CMOS process, consists of 16 data links and achieves more than 2.5 × energy-efficient memory transactions at 16 Gbps compared to a previous single-mode generation. |
doi_str_mv | 10.1109/JSSC.2012.2185370 |
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J. ; Thakkar, C. ; Beyene, W. T. ; Chan, N. ; Chen, C. ; Bing Ren Chuang ; Dressler, D. ; Gadde, V. P. ; Hekmat, M. ; Ho, E. ; Huang, C. ; Phuong Le ; Mahabaleshwara ; Madden, C. ; Mishra, N. K. ; Raghavan, L. ; Saito, K. ; Schmitt, R. ; Secker, D. ; Xudong Shi ; Fazeel, S. ; Srinivas, G. S. ; Zhang, S. ; Tran, C. ; Vaidyanath, A. ; Vyas, K. ; Jain, M. ; Kun-Yung Ken Chang ; Xingchao Yuan</creator><creatorcontrib>Kaviani, K. ; Ting Wu ; Wei, J. ; Amirkhany, A. ; Jie Shen ; Chin, T. J. ; Thakkar, C. ; Beyene, W. T. ; Chan, N. ; Chen, C. ; Bing Ren Chuang ; Dressler, D. ; Gadde, V. P. ; Hekmat, M. ; Ho, E. ; Huang, C. ; Phuong Le ; Mahabaleshwara ; Madden, C. ; Mishra, N. K. ; Raghavan, L. ; Saito, K. ; Schmitt, R. ; Secker, D. ; Xudong Shi ; Fazeel, S. ; Srinivas, G. S. ; Zhang, S. ; Tran, C. ; Vaidyanath, A. ; Vyas, K. ; Jain, M. ; Kun-Yung Ken Chang ; Xingchao Yuan</creatorcontrib><description>This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package change. The compact, low-power and high-speed tri-modal interface is enabled by substantial reuse of the circuit elements among various signaling modes, particularly in the wide-band clock generation and distribution system and the multi-modal driver output stage, as well as the use of fast equalization for post-cursor intersymbol interference (ISI) mitigation. In the high-speed differential mode, the system utilizes a 1-tap transmit equalizer during a WRITE operation to the memory. In contrast, during a memory READ operation, it employs a linear equalizer (LEQ) with 3 dB of peaking as well as a calibrated high-speed 1-tap predictive decision feedback equalizer (prDFE), while no transmitter equalization is assumed for the memory. The prototype tri-modal interface implemented in a 40-nm CMOS process, consists of 16 data links and achieves more than 2.5 × energy-efficient memory transactions at 16 Gbps compared to a previous single-mode generation.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2012.2185370</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Calibration ; Channels ; Circuit boards ; Circuit properties ; Circuits ; Circuits of signal characteristics conditioning (including delay circuits) ; clocking ; Clocks ; DDR ; decision feedback equalization ; Delay ; Design. Technologies. Operation analysis. Testing ; Drivers ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Equalization ; Equalizers ; Exact sciences and technology ; Feedback ; GDDR ; Generators ; High speed ; high-voltage protection ; Information storage ; Integrated circuits ; multi-standard memory interface ; multi-VCO PLL ; Multiplexing ; offset cancellation ; Oscillators, resonators, synthetizers ; Phase locked loops ; predictive DFE ; quadrature generator ; Random access memory ; Receivers ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>IEEE journal of solid-state circuits, 2012-04, Vol.47 (4), p.926-937</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Apr 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-dbe8e01e0c8d6dc096114422c0a10e2e8e859e64a36ac1d1a4d625af551a012f3</citedby><cites>FETCH-LOGICAL-c355t-dbe8e01e0c8d6dc096114422c0a10e2e8e859e64a36ac1d1a4d625af551a012f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6164279$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,315,782,786,791,792,798,23939,23940,25149,27933,27934,54767</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6164279$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25862515$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kaviani, K.</creatorcontrib><creatorcontrib>Ting Wu</creatorcontrib><creatorcontrib>Wei, J.</creatorcontrib><creatorcontrib>Amirkhany, A.</creatorcontrib><creatorcontrib>Jie Shen</creatorcontrib><creatorcontrib>Chin, T. J.</creatorcontrib><creatorcontrib>Thakkar, C.</creatorcontrib><creatorcontrib>Beyene, W. T.</creatorcontrib><creatorcontrib>Chan, N.</creatorcontrib><creatorcontrib>Chen, C.</creatorcontrib><creatorcontrib>Bing Ren Chuang</creatorcontrib><creatorcontrib>Dressler, D.</creatorcontrib><creatorcontrib>Gadde, V. P.</creatorcontrib><creatorcontrib>Hekmat, M.</creatorcontrib><creatorcontrib>Ho, E.</creatorcontrib><creatorcontrib>Huang, C.</creatorcontrib><creatorcontrib>Phuong Le</creatorcontrib><creatorcontrib>Mahabaleshwara</creatorcontrib><creatorcontrib>Madden, C.</creatorcontrib><creatorcontrib>Mishra, N. K.</creatorcontrib><creatorcontrib>Raghavan, L.</creatorcontrib><creatorcontrib>Saito, K.</creatorcontrib><creatorcontrib>Schmitt, R.</creatorcontrib><creatorcontrib>Secker, D.</creatorcontrib><creatorcontrib>Xudong Shi</creatorcontrib><creatorcontrib>Fazeel, S.</creatorcontrib><creatorcontrib>Srinivas, G. S.</creatorcontrib><creatorcontrib>Zhang, S.</creatorcontrib><creatorcontrib>Tran, C.</creatorcontrib><creatorcontrib>Vaidyanath, A.</creatorcontrib><creatorcontrib>Vyas, K.</creatorcontrib><creatorcontrib>Jain, M.</creatorcontrib><creatorcontrib>Kun-Yung Ken Chang</creatorcontrib><creatorcontrib>Xingchao Yuan</creatorcontrib><title>A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package change. The compact, low-power and high-speed tri-modal interface is enabled by substantial reuse of the circuit elements among various signaling modes, particularly in the wide-band clock generation and distribution system and the multi-modal driver output stage, as well as the use of fast equalization for post-cursor intersymbol interference (ISI) mitigation. In the high-speed differential mode, the system utilizes a 1-tap transmit equalizer during a WRITE operation to the memory. In contrast, during a memory READ operation, it employs a linear equalizer (LEQ) with 3 dB of peaking as well as a calibrated high-speed 1-tap predictive decision feedback equalizer (prDFE), while no transmitter equalization is assumed for the memory. The prototype tri-modal interface implemented in a 40-nm CMOS process, consists of 16 data links and achieves more than 2.5 × energy-efficient memory transactions at 16 Gbps compared to a previous single-mode generation.</description><subject>Applied sciences</subject><subject>Calibration</subject><subject>Channels</subject><subject>Circuit boards</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Circuits of signal characteristics conditioning (including delay circuits)</subject><subject>clocking</subject><subject>Clocks</subject><subject>DDR</subject><subject>decision feedback equalization</subject><subject>Delay</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Drivers</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Equalization</subject><subject>Equalizers</subject><subject>Exact sciences and technology</subject><subject>Feedback</subject><subject>GDDR</subject><subject>Generators</subject><subject>High speed</subject><subject>high-voltage protection</subject><subject>Information storage</subject><subject>Integrated circuits</subject><subject>multi-standard memory interface</subject><subject>multi-VCO PLL</subject><subject>Multiplexing</subject><subject>offset cancellation</subject><subject>Oscillators, resonators, synthetizers</subject><subject>Phase locked loops</subject><subject>predictive DFE</subject><subject>quadrature generator</subject><subject>Random access memory</subject><subject>Receivers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEFLAzEQhYMoWKs_QLwsguBlu5lks5scS6u10iLYCt6WNDuBrdvdmmwP_femtPTgZYZhvnm8eYTcAx0AUJW8LxajAaPABgyk4Dm9ID0QQsaQ8-9L0qMUZKwYpdfkxvt1GNNUQo8Mh9HSVfG8LXUdMRpPVlufzKrmJxpX1qLDpqt0nYzHnzyZhCqiOW5at4-mTYfOaoO35Mrq2uPdqffJ1-vLcvQWzz4m09FwFhsuRBeXK5RIAamRZVYaqjIIFhgzVANFFpZSKMxSzTNtoASdlhkT2goBOrxleZ88H3W3rv3doe-KTeUN1rVusN35AihjUoFSMqCP_9B1u3NNcFeoLAUBMucBgiNkXOu9Q1tsXbXRbh-UikOmxSHT4pBpcco03DydhLU3urZON6by50MmZPAMInAPR65CxPM6gyxlueJ_Tp57hA</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Kaviani, K.</creator><creator>Ting Wu</creator><creator>Wei, J.</creator><creator>Amirkhany, A.</creator><creator>Jie Shen</creator><creator>Chin, T. J.</creator><creator>Thakkar, C.</creator><creator>Beyene, W. 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(IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20120401</creationdate><title>A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface</title><author>Kaviani, K. ; Ting Wu ; Wei, J. ; Amirkhany, A. ; Jie Shen ; Chin, T. J. ; Thakkar, C. ; Beyene, W. T. ; Chan, N. ; Chen, C. ; Bing Ren Chuang ; Dressler, D. ; Gadde, V. P. ; Hekmat, M. ; Ho, E. ; Huang, C. ; Phuong Le ; Mahabaleshwara ; Madden, C. ; Mishra, N. K. ; Raghavan, L. ; Saito, K. ; Schmitt, R. ; Secker, D. ; Xudong Shi ; Fazeel, S. ; Srinivas, G. S. ; Zhang, S. ; Tran, C. ; Vaidyanath, A. ; Vyas, K. ; Jain, M. ; Kun-Yung Ken Chang ; Xingchao Yuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-dbe8e01e0c8d6dc096114422c0a10e2e8e859e64a36ac1d1a4d625af551a012f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Calibration</topic><topic>Channels</topic><topic>Circuit boards</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>Circuits of signal characteristics conditioning (including delay circuits)</topic><topic>clocking</topic><topic>Clocks</topic><topic>DDR</topic><topic>decision feedback equalization</topic><topic>Delay</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Drivers</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Equalization</topic><topic>Equalizers</topic><topic>Exact sciences and technology</topic><topic>Feedback</topic><topic>GDDR</topic><topic>Generators</topic><topic>High speed</topic><topic>high-voltage protection</topic><topic>Information storage</topic><topic>Integrated circuits</topic><topic>multi-standard memory interface</topic><topic>multi-VCO PLL</topic><topic>Multiplexing</topic><topic>offset cancellation</topic><topic>Oscillators, resonators, synthetizers</topic><topic>Phase locked loops</topic><topic>predictive DFE</topic><topic>quadrature generator</topic><topic>Random access memory</topic><topic>Receivers</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kaviani, K.</creatorcontrib><creatorcontrib>Ting Wu</creatorcontrib><creatorcontrib>Wei, J.</creatorcontrib><creatorcontrib>Amirkhany, A.</creatorcontrib><creatorcontrib>Jie Shen</creatorcontrib><creatorcontrib>Chin, T. J.</creatorcontrib><creatorcontrib>Thakkar, C.</creatorcontrib><creatorcontrib>Beyene, W. T.</creatorcontrib><creatorcontrib>Chan, N.</creatorcontrib><creatorcontrib>Chen, C.</creatorcontrib><creatorcontrib>Bing Ren Chuang</creatorcontrib><creatorcontrib>Dressler, D.</creatorcontrib><creatorcontrib>Gadde, V. P.</creatorcontrib><creatorcontrib>Hekmat, M.</creatorcontrib><creatorcontrib>Ho, E.</creatorcontrib><creatorcontrib>Huang, C.</creatorcontrib><creatorcontrib>Phuong Le</creatorcontrib><creatorcontrib>Mahabaleshwara</creatorcontrib><creatorcontrib>Madden, C.</creatorcontrib><creatorcontrib>Mishra, N. 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S.</creatorcontrib><creatorcontrib>Zhang, S.</creatorcontrib><creatorcontrib>Tran, C.</creatorcontrib><creatorcontrib>Vaidyanath, A.</creatorcontrib><creatorcontrib>Vyas, K.</creatorcontrib><creatorcontrib>Jain, M.</creatorcontrib><creatorcontrib>Kun-Yung Ken Chang</creatorcontrib><creatorcontrib>Xingchao Yuan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kaviani, K.</au><au>Ting Wu</au><au>Wei, J.</au><au>Amirkhany, A.</au><au>Jie Shen</au><au>Chin, T. J.</au><au>Thakkar, C.</au><au>Beyene, W. T.</au><au>Chan, N.</au><au>Chen, C.</au><au>Bing Ren Chuang</au><au>Dressler, D.</au><au>Gadde, V. P.</au><au>Hekmat, M.</au><au>Ho, E.</au><au>Huang, C.</au><au>Phuong Le</au><au>Mahabaleshwara</au><au>Madden, C.</au><au>Mishra, N. K.</au><au>Raghavan, L.</au><au>Saito, K.</au><au>Schmitt, R.</au><au>Secker, D.</au><au>Xudong Shi</au><au>Fazeel, S.</au><au>Srinivas, G. S.</au><au>Zhang, S.</au><au>Tran, C.</au><au>Vaidyanath, A.</au><au>Vyas, K.</au><au>Jain, M.</au><au>Kun-Yung Ken Chang</au><au>Xingchao Yuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2012-04-01</date><risdate>2012</risdate><volume>47</volume><issue>4</issue><spage>926</spage><epage>937</epage><pages>926-937</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package change. The compact, low-power and high-speed tri-modal interface is enabled by substantial reuse of the circuit elements among various signaling modes, particularly in the wide-band clock generation and distribution system and the multi-modal driver output stage, as well as the use of fast equalization for post-cursor intersymbol interference (ISI) mitigation. In the high-speed differential mode, the system utilizes a 1-tap transmit equalizer during a WRITE operation to the memory. In contrast, during a memory READ operation, it employs a linear equalizer (LEQ) with 3 dB of peaking as well as a calibrated high-speed 1-tap predictive decision feedback equalizer (prDFE), while no transmitter equalization is assumed for the memory. The prototype tri-modal interface implemented in a 40-nm CMOS process, consists of 16 data links and achieves more than 2.5 × energy-efficient memory transactions at 16 Gbps compared to a previous single-mode generation.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2012.2185370</doi><tpages>12</tpages></addata></record> |
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subjects | Applied sciences Calibration Channels Circuit boards Circuit properties Circuits Circuits of signal characteristics conditioning (including delay circuits) clocking Clocks DDR decision feedback equalization Delay Design. Technologies. Operation analysis. Testing Drivers Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Equalization Equalizers Exact sciences and technology Feedback GDDR Generators High speed high-voltage protection Information storage Integrated circuits multi-standard memory interface multi-VCO PLL Multiplexing offset cancellation Oscillators, resonators, synthetizers Phase locked loops predictive DFE quadrature generator Random access memory Receivers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface |
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