A Tri-Modal 20-Gbps/Link Differential/DDR3/GDDR5 Memory Interface

This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signalin...

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Veröffentlicht in:IEEE journal of solid-state circuits 2012-04, Vol.47 (4), p.926-937
Hauptverfasser: Kaviani, K., Ting Wu, Wei, J., Amirkhany, A., Jie Shen, Chin, T. J., Thakkar, C., Beyene, W. T., Chan, N., Chen, C., Bing Ren Chuang, Dressler, D., Gadde, V. P., Hekmat, M., Ho, E., Huang, C., Phuong Le, Mahabaleshwara, Madden, C., Mishra, N. K., Raghavan, L., Saito, K., Schmitt, R., Secker, D., Xudong Shi, Fazeel, S., Srinivas, G. S., Zhang, S., Tran, C., Vaidyanath, A., Vyas, K., Jain, M., Kun-Yung Ken Chang, Xingchao Yuan
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Sprache:eng
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Zusammenfassung:This paper describes a tri-modal asymmetric bidirectional differential memory interface that supports data rates of up to 20 Gbps over 3" FR4 PCB channels while achieving power efficiency of 6.1 mW/Gbps at full speed. The interface also accommodates single-ended standard DDR3 and GDDR5 signaling at 1.6-Gbps and 6.4-Gbps operations, respectively, without package change. The compact, low-power and high-speed tri-modal interface is enabled by substantial reuse of the circuit elements among various signaling modes, particularly in the wide-band clock generation and distribution system and the multi-modal driver output stage, as well as the use of fast equalization for post-cursor intersymbol interference (ISI) mitigation. In the high-speed differential mode, the system utilizes a 1-tap transmit equalizer during a WRITE operation to the memory. In contrast, during a memory READ operation, it employs a linear equalizer (LEQ) with 3 dB of peaking as well as a calibrated high-speed 1-tap predictive decision feedback equalizer (prDFE), while no transmitter equalization is assumed for the memory. The prototype tri-modal interface implemented in a 40-nm CMOS process, consists of 16 data links and achieves more than 2.5 × energy-efficient memory transactions at 16 Gbps compared to a previous single-mode generation.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2012.2185370