Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

A novel capacitance coupling complementary dual-direction silicon-controlled rectifier (SCR) (CCCDSCR) for high-voltage electrostatic discharge protection is proposed and verified in 0.5-μm BCD process. The trigger voltage of CCCDSCR can be adjusted by coupling capacitance to meet different protecti...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2012-05, Vol.33 (5), p.640-642
Hauptverfasser:	Shurong Dong, Hao Jin, Meng Miao, Jian Wu, Liou, J. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Capacitance coupling CMOS integrated circuits Couplings dual-direction silicon-controlled rectifier (SCR) Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics electrostatic discharge (ESD) Electrostatic discharges Exact sciences and technology high-voltage protection Kirk field collapse effect Thyristors Voltage measurement
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A novel capacitance coupling complementary dual-direction silicon-controlled rectifier (SCR) (CCCDSCR) for high-voltage electrostatic discharge protection is proposed and verified in 0.5-μm BCD process. The trigger voltage of CCCDSCR can be adjusted by coupling capacitance to meet different protection requirements. Compared with traditional lateral double-diffusion NMOS, LDSCR, stacked field-oxide device, and stacked low-voltage-triggering SCR devices, the CCCDSCR has appropriate low trigger voltage of 27.3 V, high holding voltage of 24.3 V, and highest figure of merit (FOM) according to our defined FOM.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2012.2188015