Quantized Conductance in Ag/GeS2/W Conductive-Bridge Memory Cells

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2012-02, Vol.33 (2), p.257-259
Hauptverfasser:	JAMESON, John R, GILBERT, Nad, KOUSHAN, Foroozan, SAENZ, Juan, WANG, Janet, HOLLMER, Shane, KOZICKI, Michael, DERHACOBIAN, Narbeh
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!