Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

In this letter, we present a novel device, the germanium electron-hole (EH) bilayer tunnel field-effect transistor, which exploits carrier tunneling through a bias-induced EH bilayer. The proposed architecture provides a quasi-ideal alignment between the tunneling path and the electric field control...

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Veröffentlicht in:	IEEE electron device letters 2012-02, Vol.33 (2), p.167-169
Hauptverfasser:	Lattanzio, L., De Michielis, L., Ionescu, A. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Band-to-band tunneling (BTBT) Computer simulation Delay Devices Electric potential electron-hole (EH) bilayer Electronics Exact sciences and technology FETs field-effect transistor (FET) Gates Germanium Logic gates Mathematical models Performance evaluation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices subthreshold slope Transistors tunnel FET (TFET) Tunneling Tunnels (transportation) Voltage
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Beschreibung
Zusammenfassung:	In this letter, we present a novel device, the germanium electron-hole (EH) bilayer tunnel field-effect transistor, which exploits carrier tunneling through a bias-induced EH bilayer. The proposed architecture provides a quasi-ideal alignment between the tunneling path and the electric field controlled by the gate. The device principle and performances are studied by 2-D numerical simulations. This device allows interesting features in terms of low operating voltage (
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2011.2175898