Vertical-Gate Si/SiGe Double-HBT-Based Capacitorless IT DRAM Cell for Extended Retention Time at Low Latch Voltage

Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 2012, Vol.33 (2), p.134-136
Hauptverfasser:	JA SUN SHIN, CHOI, Hyunjun, BAE, Hagyoul, JANG, Jaeman, YUN, Daeyoun, HONG, Euiyoun, DAE HWAN KIM, DONG MYONG KIM
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compound structure devices Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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