Reset Current Scaling in Phase-Change Memory Cells: Modeling and Experiments

The operation of a phase-change memory cell is studied, with special regard to programming performance, by means of analytical and TCAD numerical modeling and experimental characterization. Dependence of the reset current on geometrical properties of the heater element is analyzed through the study...

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Veröffentlicht in:IEEE transactions on electron devices 2012-02, Vol.59 (2), p.283-291
Hauptverfasser: Bergonzoni, C., Borghi, M., Palumbo, E.
Format: Artikel
Sprache:eng
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Zusammenfassung:The operation of a phase-change memory cell is studied, with special regard to programming performance, by means of analytical and TCAD numerical modeling and experimental characterization. Dependence of the reset current on geometrical properties of the heater element is analyzed through the study of heat flux from the heater element to the phase-change material. A simple electrothermal analytical model is implemented, which allows the prediction of the cell reset current value as a function of heater geometrical parameters. Analytical predictions are compared with good agreement to extensive experimental measurements. The effects of power dissipation are studied, showing that cell power efficiency strongly depends on its geometrical properties.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2175736