An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fabricating Microcrystalline-Si TFTs : Electronic Displays
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| Veröffentlicht in: | IEICE transactions on electronics 2011, Vol.94 (11), p.1733-1738 |
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| container_end_page | 1738 |
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| container_issue | 11 |
| container_start_page | 1733 |
| container_title | IEICE transactions on electronics |
| container_volume | 94 |
| creator | MORIMOTO, Kiyoshi SUZUKI, Nobuyasu YAMANAKA, Kazuhiko YURI, Masaaki MILLIEZ, Janet XINBING LIU |
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| fulltext | fulltext |
| identifier | ISSN: 0916-8524 |
| ispartof | IEICE transactions on electronics, 2011, Vol.94 (11), p.1733-1738 |
| issn | 0916-8524 1745-1353 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_25273441 |
| source | J-STAGE Free |
| subjects | Applied sciences Doped-insulator lasers and other solid state lasers Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers laser diodes Transistors |
| title | An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fabricating Microcrystalline-Si TFTs : Electronic Displays |
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