Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al―TiW―Pd2Si/n-Si Schottky Device at Two Frequencies

Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al―TiW―Pd2Si/n-Si Schottky Device at Two Frequencies

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Veröffentlicht in:IEEE transactions on electron devices 2011-11, Vol.58 (11), p.4042-4048
Hauptverfasser: DOKME, Ilbilge, ALTINDAL, Semsettin
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_start_page 4042
container_title IEEE transactions on electron devices
container_volume 58
creator DOKME, Ilbilge
ALTINDAL, Semsettin
description
doi_str_mv 10.1109/TED.2011.2165846
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fullrecord <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_24776193</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24776193</sourcerecordid><originalsourceid>FETCH-LOGICAL-p185t-2b48a13964fdcf1567b5652bde85a47c866d06ec49f6c8d514555ca53f9257353</originalsourceid><addsrcrecordid>eNotj81OwzAQhC0EEqVw5-gLx7TxzzrOseoPIFWiUoM4Vq6zEYY0CY5b1BuvwIEX5EmwgMuu9tPMjoaQa5aOGEvzcTGfjXjK2IgzBVqqEzJgAFmSK6lOySBNmU5yocU5uej7l3gqKfmAfE7bXWe8Ce6AdNKY-ti7nrYVLXDXYeR7j8kMO2xKbAKd12iDd9bU1DQlnTn8B3Tl26gPDn_dpqGT-vvjq3BPca5KvnbjJlk7urbPbQivRzrDg7NITaDFe0sXHt_22NhovyRnlal7vPrfQ_K4mBfTu2T5cHs_nSyTjmkICd9KbZiI9arSVgxUtgUFfFuiBiMzq5UqU4VW5pWyugQmAcAaEFXOIRMghuTm729n-tin8ibG95vOu53xxw2XWaZYLsQPlLFq9A</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al―TiW―Pd2Si/n-Si Schottky Device at Two Frequencies</title><source>IEEE Electronic Library (IEL)</source><creator>DOKME, Ilbilge ; ALTINDAL, Semsettin</creator><creatorcontrib>DOKME, Ilbilge ; ALTINDAL, Semsettin</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2011.2165846</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Diodes ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.4042-4048</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=24776193$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>DOKME, Ilbilge</creatorcontrib><creatorcontrib>ALTINDAL, Semsettin</creatorcontrib><title>Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al―TiW―Pd2Si/n-Si Schottky Device at Two Frequencies</title><title>IEEE transactions on electron devices</title><subject>Applied sciences</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotj81OwzAQhC0EEqVw5-gLx7TxzzrOseoPIFWiUoM4Vq6zEYY0CY5b1BuvwIEX5EmwgMuu9tPMjoaQa5aOGEvzcTGfjXjK2IgzBVqqEzJgAFmSK6lOySBNmU5yocU5uej7l3gqKfmAfE7bXWe8Ce6AdNKY-ti7nrYVLXDXYeR7j8kMO2xKbAKd12iDd9bU1DQlnTn8B3Tl26gPDn_dpqGT-vvjq3BPca5KvnbjJlk7urbPbQivRzrDg7NITaDFe0sXHt_22NhovyRnlal7vPrfQ_K4mBfTu2T5cHs_nSyTjmkICd9KbZiI9arSVgxUtgUFfFuiBiMzq5UqU4VW5pWyugQmAcAaEFXOIRMghuTm729n-tin8ibG95vOu53xxw2XWaZYLsQPlLFq9A</recordid><startdate>20111101</startdate><enddate>20111101</enddate><creator>DOKME, Ilbilge</creator><creator>ALTINDAL, Semsettin</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>20111101</creationdate><title>Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al―TiW―Pd2Si/n-Si Schottky Device at Two Frequencies</title><author>DOKME, Ilbilge ; ALTINDAL, Semsettin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p185t-2b48a13964fdcf1567b5652bde85a47c866d06ec49f6c8d514555ca53f9257353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Diodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DOKME, Ilbilge</creatorcontrib><creatorcontrib>ALTINDAL, Semsettin</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DOKME, Ilbilge</au><au>ALTINDAL, Semsettin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al―TiW―Pd2Si/n-Si Schottky Device at Two Frequencies</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>2011-11-01</date><risdate>2011</risdate><volume>58</volume><issue>11</issue><spage>4042</spage><epage>4048</epage><pages>4042-4048</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/TED.2011.2165846</doi><tpages>7</tpages></addata></record>
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language eng
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source IEEE Electronic Library (IEL)
subjects Applied sciences
Diodes
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al―TiW―Pd2Si/n-Si Schottky Device at Two Frequencies
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T15%3A09%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comparative%20Analysis%20of%20Temperature-Dependent%20Electrical%20and%20Dielectric%20Properties%20of%20an%20Al%E2%80%95TiW%E2%80%95Pd2Si/n-Si%20Schottky%20Device%20at%20Two%20Frequencies&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=DOKME,%20Ilbilge&rft.date=2011-11-01&rft.volume=58&rft.issue=11&rft.spage=4042&rft.epage=4048&rft.pages=4042-4048&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2011.2165846&rft_dat=%3Cpascalfrancis%3E24776193%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true