Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Thin film transistors (TFTs) with amorphous indium zinc oxide (a-IZO) as channel layers and poly-4-vinylphenol as dielectric layers were fabricated. Transmission curves show that the double-layer structure of the a-IZO layer and the poly-4-vinylphenol layer exhibits the antireflection effect. It was...

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Veröffentlicht in:Semiconductor science and technology 2011-09, Vol.26 (9), p.095004-5
Hauptverfasser: Pu, Haifeng, Li, Guifeng, Feng, Jiahan, Liu, Baoying, Zhang, Qun
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Channels
Dielectrics
Electronics
Exact sciences and technology
Heat treatment
Indium
Saturation
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Thin film transistors
Transistors
Zinc oxide
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Zusammenfassung:Thin film transistors (TFTs) with amorphous indium zinc oxide (a-IZO) as channel layers and poly-4-vinylphenol as dielectric layers were fabricated. Transmission curves show that the double-layer structure of the a-IZO layer and the poly-4-vinylphenol layer exhibits the antireflection effect. It was found that post heat-treatment at relatively low temperature will improve the electrical performance of the transistors. TFT devices with saturation mobility of 25.4 cm super(2) V super(-1) s super(-1), threshold voltage of 4.0 V, subthreshold swing value of 0.88 V/decade and current on/off ratio of 10 super(6) were obtained.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/26/9/095004