1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al 2 O 3 gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple fiel...

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Veröffentlicht in:	IEEE electron device letters 2011-05, Vol.32 (5), p.632-634
Hauptverfasser:	Rongming Chu, Corrion, A, Chen, M, Ray Li, Wong, D, Zehnder, D, Hughes, B, Boutros, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Applied sciences Degradation Dynamic on-resistance Dynamics Electrodes Electronics Exact sciences and technology FETs field plate field-effect transistor Gallium nitride GaN gate insulator Gates Leakage current Logic gates Plates power switch Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Switches Transistors Voltage
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Beschreibung
Zusammenfassung:	This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al 2 O 3 gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic on-resistance at high-voltage operation.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2011.2118190