Organic Programmable Resistance Memory Device Based on Au/Alq3/gold-nanoparticle/Alq3/Al Structure

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Veröffentlicht in:	IEEE electron device letters 2011, Vol.32 (8), p.1140-1142
Hauptverfasser:	XIN LIU, ZHUOYU JI, LIWEI SHANG, HONG WANG, YINGPING CHEN, MAIXING HAN, CONGYAN LU, MING LIU, JUNNING CHEN
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cross-disciplinary physics: materials science rheology Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Materials science Nanoscale materials and structures: fabrication and characterization Other topics in nanoscale materials and structures Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information
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ISSN:	0741-3106 1558-0563