Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe
We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 10 9 cycles. Our...
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| Veröffentlicht in: | IEEE electron device letters 2011-08, Vol.32 (8), p.1113-1115 |
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| container_end_page | 1115 |
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| container_issue | 8 |
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| container_title | IEEE electron device letters |
| container_volume | 32 |
| creator | LEE, Jinil CHO, Sunglae AHN, Dongho KANG, Mansug NAM, Seokwoo KANG, Ho-Kyu CHUNG, Chilhee |
| description | We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 10 9 cycles. Our results indicate that the scalable PRAM device enabling the use of PRAM in dynamic RAM and storage class memory applications can be realized using CVD GBT. |
| doi_str_mv | 10.1109/LED.2011.2157075 |
| format | Article |
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Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 10 9 cycles. Our results indicate that the scalable PRAM device enabling the use of PRAM in dynamic RAM and storage class memory applications can be realized using CVD GBT.</description><subject>Applied sciences</subject><subject>Bismuth</subject><subject>Chemical vapor deposition</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystallization</subject><subject>Crystallization speed</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Durability</subject><subject>Dynamics</subject><subject>Electronics</subject><subject>Endurance</subject><subject>Exact sciences and technology</subject><subject>GeBiTe (GBT)</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Phase change materials</subject><subject>Phase change random access memory</subject><subject>phase-change random access memory (PRAM)</subject><subject>Physics</subject><subject>Random access memory</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Solid state devices</topic><topic>Sensors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LEE, Jinil</creatorcontrib><creatorcontrib>CHO, Sunglae</creatorcontrib><creatorcontrib>AHN, Dongho</creatorcontrib><creatorcontrib>KANG, Mansug</creatorcontrib><creatorcontrib>NAM, Seokwoo</creatorcontrib><creatorcontrib>KANG, Ho-Kyu</creatorcontrib><creatorcontrib>CHUNG, Chilhee</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, Jinil</au><au>CHO, Sunglae</au><au>AHN, Dongho</au><au>KANG, Mansug</au><au>NAM, Seokwoo</au><au>KANG, Ho-Kyu</au><au>CHUNG, Chilhee</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2011-08-01</date><risdate>2011</risdate><volume>32</volume><issue>8</issue><spage>1113</spage><epage>1115</epage><pages>1113-1115</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 10 9 cycles. Our results indicate that the scalable PRAM device enabling the use of PRAM in dynamic RAM and storage class memory applications can be realized using CVD GBT.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2011.2157075</doi><tpages>3</tpages></addata></record> |
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| subjects | Applied sciences Bismuth Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Crystallization Crystallization speed Design. Technologies. Operation analysis. Testing Devices Durability Dynamics Electronics Endurance Exact sciences and technology GeBiTe (GBT) Integrated circuits Integrated circuits by function (including memories and processors) Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Phase change materials Phase change random access memory phase-change random access memory (PRAM) Physics Random access memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors |
| title | Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe |
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