Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe

We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 10 9 cycles. Our...

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Veröffentlicht in:	IEEE electron device letters 2011-08, Vol.32 (8), p.1113-1115
Hauptverfasser:	LEE, Jinil, CHO, Sunglae, AHN, Dongho, KANG, Mansug, NAM, Seokwoo, KANG, Ho-Kyu, CHUNG, Chilhee
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bismuth Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Crystallization Crystallization speed Design. Technologies. Operation analysis. Testing Devices Durability Dynamics Electronics Endurance Exact sciences and technology GeBiTe (GBT) Integrated circuits Integrated circuits by function (including memories and processors) Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Phase change materials Phase change random access memory phase-change random access memory (PRAM) Physics Random access memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors
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Zusammenfassung:	We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 10 9 cycles. Our results indicate that the scalable PRAM device enabling the use of PRAM in dynamic RAM and storage class memory applications can be realized using CVD GBT.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2011.2157075