Enhanced room temperature mobilities and reduced parallel conduction in hydrogen passivated Si/SiGe heterostructures

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Veröffentlicht in:	Semiconductor science and technology 1998-11, Vol.13 (11), p.1317-1321
Hauptverfasser:	Raghavan, M N V, Venkataraman, V
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Low-field transport and mobility piezoresistance Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Physics
Online-Zugang:	Volltext
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