Characterization of crosstalk noise in submicron CMOS integrated circuits: an experimental view

A way to characterize the crosstalk noise susceptibility for integrated circuits fabrication technologies is presented. A comparison between 0.7- and 0.35-/spl mu/m technologies shows the increasing importance of crosstalk noise and, therefore, the need to consider this effect at the design level in submicron integrated circuits. An approach to measure the internal crosstalk generated by long metal interconnects based on using an RS latch sensor is proposed. An implementation and experimental measurements for 0.7-/spl mu/m technology are reported, confirming the very high noise peak values.