Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell: Memristive and Resistive Devices and Systems

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2011, Vol.102 (4), p.983-990
Hauptverfasser:	YOON, Sung-Min, YANG, Shinhyuk, KANG, Seung-Youl, RYU, Ho-Jun, YU, Byoung-Gon, JUNG, Soon-Won, BYUN, Chun-Won, RYU, Min-Ki, CHEONG, Woo-Seok, KIM, Byeonghoon, OH, Himchan, PARK, Sang-Hee Ko, HWANG, Chi-Sun
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronics Exact sciences and technology Materials Molecular electronics, nanoelectronics Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:
ISSN:	0947-8396 1432-0630