The Soft Punchthrough+ Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection
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| Veröffentlicht in: | IEEE transactions on electron devices 2011, Vol.58 (3), p.769-775 |
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| container_end_page | 775 |
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| container_issue | 3 |
| container_start_page | 769 |
| container_title | IEEE transactions on electron devices |
| container_volume | 58 |
| creator | ANTONIOU, Marina UDREA, Florin BAUER, Friedhelm NISTOR, Iulian |
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| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2011, Vol.58 (3), p.769-775 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_23938364 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Compound structure devices Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | The Soft Punchthrough+ Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection |
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