The Soft Punchthrough+ Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2011, Vol.58 (3), p.769-775
Hauptverfasser:	ANTONIOU, Marina, UDREA, Florin, BAUER, Friedhelm, NISTOR, Iulian
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compound structure devices Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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