Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array

Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array

A new ferroelectric memory array on a glass substrate has been developed using In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate diele...

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Veröffentlicht in:IEEE electron device letters 2011-03, Vol.32 (3), p.324-326
Hauptverfasser: BYEONG HOON KIM, CHUN WON BYUN, PARK, Eun-Suk, HIM CHAN OH, KIM, Kyoung-Hwan, KEE CHAN PARK, YOON, Sung-Min, SHIN HYUK YANG, JUNG, Soon-Won, MIN KI RYU, KO PARK, Sang-Hee, HWANG, Chi-Sun, CHO, Kyoung-Ik, KWON, Oh-Sang
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum oxide
Applied sciences
Arrays
Devices
Dielectrics
Disturb-free
Electronics
Exact sciences and technology
Ferroelectric materials
ferroelectric memory
Ferroelectricity
Gates
In-Ga-Zn-O (IGZO)
Integrated circuits
Integrated circuits by function (including memories and processors)
Logic gates
Magnetic and optical mass memories
Pixel
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
System-on-a-chip
Thin film transistors
thin-film transistor (TFT)
Transistors
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Beschreibung
Zusammenfassung:A new ferroelectric memory array on a glass substrate has been developed using In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate dielectric layer of the FeTFT. All the fabrication processes were performed below 200°C. The fabricated memory successfully demonstrated disturb-free write/readout operation. The current ratio between the "1" and "0" states is about 10 4 .
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2096197