On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Alo.3Gao.7N heterostructures

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Microelectronics and reliability 2011, Vol.51 (3), p.581-586
Hauptverfasser: TEKELI, Z, GÖKCEN, M, ALTINDAL, S, ÖZCELIK, S, ÖZBAY, E
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 586
container_issue 3
container_start_page 581
container_title Microelectronics and reliability
container_volume 51
creator TEKELI, Z
GÖKCEN, M
ALTINDAL, S
ÖZCELIK, S
ÖZBAY, E
description
format Article
fullrecord <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_23933273</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>23933273</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_239332733</originalsourceid><addsrcrecordid>eNqNyrtuwjAUAFCrolID7T94QSpDEj9QXUZUUZjSpQNbZDnXxZVrm2tnyN-jSHxAp7OcB1LxdyXq3ZafF6RiTLzVQvHtE1nm_MsYU4zzivx8BVouQBNG6zzQaKlFuI4QzEQHSBAGCIUODjyYgs7MMwEWB3nOr51r9-OmPequ3fvYyKOOjeroBQpgzAVHU0aE_EwerfYZXu6uyPrz8P1xqpPORnuLOhiX-4TuT-PUC7mTUigp__tu8ZxJ2w</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Alo.3Gao.7N heterostructures</title><source>Access via ScienceDirect (Elsevier)</source><creator>TEKELI, Z ; GÖKCEN, M ; ALTINDAL, S ; ÖZCELIK, S ; ÖZBAY, E</creator><creatorcontrib>TEKELI, Z ; GÖKCEN, M ; ALTINDAL, S ; ÖZCELIK, S ; ÖZBAY, E</creatorcontrib><identifier>ISSN: 0026-2714</identifier><identifier>EISSN: 1872-941X</identifier><identifier>CODEN: MCRLAS</identifier><language>eng</language><publisher>Kidlington: Elsevier</publisher><subject>Applied sciences ; Compound structure devices ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Microelectronics and reliability, 2011, Vol.51 (3), p.581-586</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=23933273$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>TEKELI, Z</creatorcontrib><creatorcontrib>GÖKCEN, M</creatorcontrib><creatorcontrib>ALTINDAL, S</creatorcontrib><creatorcontrib>ÖZCELIK, S</creatorcontrib><creatorcontrib>ÖZBAY, E</creatorcontrib><title>On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Alo.3Gao.7N heterostructures</title><title>Microelectronics and reliability</title><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0026-2714</issn><issn>1872-941X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNyrtuwjAUAFCrolID7T94QSpDEj9QXUZUUZjSpQNbZDnXxZVrm2tnyN-jSHxAp7OcB1LxdyXq3ZafF6RiTLzVQvHtE1nm_MsYU4zzivx8BVouQBNG6zzQaKlFuI4QzEQHSBAGCIUODjyYgs7MMwEWB3nOr51r9-OmPequ3fvYyKOOjeroBQpgzAVHU0aE_EwerfYZXu6uyPrz8P1xqpPORnuLOhiX-4TuT-PUC7mTUigp__tu8ZxJ2w</recordid><startdate>2011</startdate><enddate>2011</enddate><creator>TEKELI, Z</creator><creator>GÖKCEN, M</creator><creator>ALTINDAL, S</creator><creator>ÖZCELIK, S</creator><creator>ÖZBAY, E</creator><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>2011</creationdate><title>On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Alo.3Gao.7N heterostructures</title><author>TEKELI, Z ; GÖKCEN, M ; ALTINDAL, S ; ÖZCELIK, S ; ÖZBAY, E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_239332733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>TEKELI, Z</creatorcontrib><creatorcontrib>GÖKCEN, M</creatorcontrib><creatorcontrib>ALTINDAL, S</creatorcontrib><creatorcontrib>ÖZCELIK, S</creatorcontrib><creatorcontrib>ÖZBAY, E</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Microelectronics and reliability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>TEKELI, Z</au><au>GÖKCEN, M</au><au>ALTINDAL, S</au><au>ÖZCELIK, S</au><au>ÖZBAY, E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Alo.3Gao.7N heterostructures</atitle><jtitle>Microelectronics and reliability</jtitle><date>2011</date><risdate>2011</risdate><volume>51</volume><issue>3</issue><spage>581</spage><epage>586</epage><pages>581-586</pages><issn>0026-2714</issn><eissn>1872-941X</eissn><coden>MCRLAS</coden><cop>Kidlington</cop><pub>Elsevier</pub></addata></record>
fulltext fulltext
identifier ISSN: 0026-2714
ispartof Microelectronics and reliability, 2011, Vol.51 (3), p.581-586
issn 0026-2714
1872-941X
language eng
recordid cdi_pascalfrancis_primary_23933273
source Access via ScienceDirect (Elsevier)
subjects Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Alo.3Gao.7N heterostructures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T03%3A58%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20profile%20of%20frequency%20dependent%20dielectric%20properties%20of%20(Ni/Au)/GaN/Alo.3Gao.7N%20heterostructures&rft.jtitle=Microelectronics%20and%20reliability&rft.au=TEKELI,%20Z&rft.date=2011&rft.volume=51&rft.issue=3&rft.spage=581&rft.epage=586&rft.pages=581-586&rft.issn=0026-2714&rft.eissn=1872-941X&rft.coden=MCRLAS&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E23933273%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true