Annular Spin-Transfer Memory Element

An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1-5 nm in thickness, 20-250 nm in mean radius, and 8-100 nm in width), comprising a reference ma...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on nanotechnology 2011-01, Vol.10 (1), p.129-134
Hauptverfasser:	Kent, A D, Stein, D L
Format:	Artikel
Sprache:	eng
Schlagworte:	Annular Applied sciences Computer memory Demand Devices Electronics Exact sciences and technology Geometry Helicity Impedance Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Magnetic data storage Magnetic devices Magnetic materials Magnetic memory magnetic random access memory (MRAM) Magnetic separation Magnetic switching Magnetization Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Nanotechnology Recording and replay of audio and video signals Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shape Shape memory spin-transfer Storage and reproduction of information Writing
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!