Advances in group III-nitride-based deep UV light-emitting diode technology: From heterostructures to nanostructures
Gespeichert in:
| Veröffentlicht in: | Semiconductor science and technology 2011, Vol.26 (1) |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 1 |
| container_start_page | |
| container_title | Semiconductor science and technology |
| container_volume | 26 |
| creator | KNEISSL, M KOLBE, T JOHNSON, N. M WEYERS, M CHUA, C KUELLER, V LOBO, N STELLMACH, J KNAUER, A RODRIGUEZ, H EINFELDT, S YANG, Z |
| description | |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_23807641</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>23807641</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_238076413</originalsourceid><addsrcrecordid>eNqNjr0KwjAYAIMoWH_eIYtjIGlL7CqiWFzVtcTma_pJm5QkCn17O_gATrcc3M1IIjIpmJS5mJOEp7JgIs3TJVmF8OJciCLjCbke9EfZGgJFS41374GWZcksRo8a2FMF0FQDDPT-oB2aNjLoMUa0hmp0GmiEurWuc2bckEWjugDbH9dkdz7djhc2qFCrrvFTCEM1eOyVH6s0K_h-usv-9b661D_a</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Advances in group III-nitride-based deep UV light-emitting diode technology: From heterostructures to nanostructures</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>KNEISSL, M ; KOLBE, T ; JOHNSON, N. M ; WEYERS, M ; CHUA, C ; KUELLER, V ; LOBO, N ; STELLMACH, J ; KNAUER, A ; RODRIGUEZ, H ; EINFELDT, S ; YANG, Z</creator><creatorcontrib>KNEISSL, M ; KOLBE, T ; JOHNSON, N. M ; WEYERS, M ; CHUA, C ; KUELLER, V ; LOBO, N ; STELLMACH, J ; KNAUER, A ; RODRIGUEZ, H ; EINFELDT, S ; YANG, Z</creatorcontrib><identifier>ISSN: 0268-1242</identifier><identifier>EISSN: 1361-6641</identifier><identifier>CODEN: SSTEET</identifier><language>eng</language><publisher>Bristol: Institute of Physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Semiconductor science and technology, 2011, Vol.26 (1)</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4009</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23807641$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KNEISSL, M</creatorcontrib><creatorcontrib>KOLBE, T</creatorcontrib><creatorcontrib>JOHNSON, N. M</creatorcontrib><creatorcontrib>WEYERS, M</creatorcontrib><creatorcontrib>CHUA, C</creatorcontrib><creatorcontrib>KUELLER, V</creatorcontrib><creatorcontrib>LOBO, N</creatorcontrib><creatorcontrib>STELLMACH, J</creatorcontrib><creatorcontrib>KNAUER, A</creatorcontrib><creatorcontrib>RODRIGUEZ, H</creatorcontrib><creatorcontrib>EINFELDT, S</creatorcontrib><creatorcontrib>YANG, Z</creatorcontrib><title>Advances in group III-nitride-based deep UV light-emitting diode technology: From heterostructures to nanostructures</title><title>Semiconductor science and technology</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0268-1242</issn><issn>1361-6641</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNjr0KwjAYAIMoWH_eIYtjIGlL7CqiWFzVtcTma_pJm5QkCn17O_gATrcc3M1IIjIpmJS5mJOEp7JgIs3TJVmF8OJciCLjCbke9EfZGgJFS41374GWZcksRo8a2FMF0FQDDPT-oB2aNjLoMUa0hmp0GmiEurWuc2bckEWjugDbH9dkdz7djhc2qFCrrvFTCEM1eOyVH6s0K_h-usv-9b661D_a</recordid><startdate>2011</startdate><enddate>2011</enddate><creator>KNEISSL, M</creator><creator>KOLBE, T</creator><creator>JOHNSON, N. M</creator><creator>WEYERS, M</creator><creator>CHUA, C</creator><creator>KUELLER, V</creator><creator>LOBO, N</creator><creator>STELLMACH, J</creator><creator>KNAUER, A</creator><creator>RODRIGUEZ, H</creator><creator>EINFELDT, S</creator><creator>YANG, Z</creator><general>Institute of Physics</general><scope>IQODW</scope></search><sort><creationdate>2011</creationdate><title>Advances in group III-nitride-based deep UV light-emitting diode technology</title><author>KNEISSL, M ; KOLBE, T ; JOHNSON, N. M ; WEYERS, M ; CHUA, C ; KUELLER, V ; LOBO, N ; STELLMACH, J ; KNAUER, A ; RODRIGUEZ, H ; EINFELDT, S ; YANG, Z</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_238076413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KNEISSL, M</creatorcontrib><creatorcontrib>KOLBE, T</creatorcontrib><creatorcontrib>JOHNSON, N. M</creatorcontrib><creatorcontrib>WEYERS, M</creatorcontrib><creatorcontrib>CHUA, C</creatorcontrib><creatorcontrib>KUELLER, V</creatorcontrib><creatorcontrib>LOBO, N</creatorcontrib><creatorcontrib>STELLMACH, J</creatorcontrib><creatorcontrib>KNAUER, A</creatorcontrib><creatorcontrib>RODRIGUEZ, H</creatorcontrib><creatorcontrib>EINFELDT, S</creatorcontrib><creatorcontrib>YANG, Z</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Semiconductor science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KNEISSL, M</au><au>KOLBE, T</au><au>JOHNSON, N. M</au><au>WEYERS, M</au><au>CHUA, C</au><au>KUELLER, V</au><au>LOBO, N</au><au>STELLMACH, J</au><au>KNAUER, A</au><au>RODRIGUEZ, H</au><au>EINFELDT, S</au><au>YANG, Z</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Advances in group III-nitride-based deep UV light-emitting diode technology: From heterostructures to nanostructures</atitle><jtitle>Semiconductor science and technology</jtitle><date>2011</date><risdate>2011</risdate><volume>26</volume><issue>1</issue><issn>0268-1242</issn><eissn>1361-6641</eissn><coden>SSTEET</coden><cop>Bristol</cop><pub>Institute of Physics</pub></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0268-1242 |
| ispartof | Semiconductor science and technology, 2011, Vol.26 (1) |
| issn | 0268-1242 1361-6641 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_23807641 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Advances in group III-nitride-based deep UV light-emitting diode technology: From heterostructures to nanostructures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T03%3A36%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Advances%20in%20group%20III-nitride-based%20deep%20UV%20light-emitting%20diode%20technology:%20From%20heterostructures%20to%20nanostructures&rft.jtitle=Semiconductor%20science%20and%20technology&rft.au=KNEISSL,%20M&rft.date=2011&rft.volume=26&rft.issue=1&rft.issn=0268-1242&rft.eissn=1361-6641&rft.coden=SSTEET&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E23807641%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |