The Role of CuAlO Interface Layer for Switching Behavior of Al/CuxO/Cu Memory Device
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| Veröffentlicht in: | IEEE electron device letters 2010-12, Vol.31 (12), p.1464-1466 |
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| container_end_page | 1466 |
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| container_issue | 12 |
| container_start_page | 1464 |
| container_title | IEEE electron device letters |
| container_volume | 31 |
| creator | HANGBING LV TINGAO TANG |
| description | |
| doi_str_mv | 10.1109/LED.2010.2081339 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2010-12, Vol.31 (12), p.1464-1466 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_23669653 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information |
| title | The Role of CuAlO Interface Layer for Switching Behavior of Al/CuxO/Cu Memory Device |
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