Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 − xSb heterostructures

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Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor science and technology 2010-12, Vol.25 (12), p.125005
Hauptverfasser:	Pooley, O J, Gilbertson, A M, Buckle, P D, Hall, R S, Emeny, M T, Fearn, M, Halsall, M P, Cohen, L F, Ashley, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) Physics
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