Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory Application

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2010-11, Vol.57 (11), p.2794-2800
Hauptverfasser:	GANG ZHANG, CHANG HO RA, LI, Hua-Min, SHEN, Tian-Zi, CHEONG, Byung-Ki, WON JONG YOO
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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