Silicon Filled Integrated Waveguides
In this letter, we report, for the first time, a silicon-filled integrated waveguide based on a two mask integrated circuit (IC) process and substrate transfer technique. The fabrication process offers a high degree of control and repeatability on the device geometrical dimensions. Waveguide structu...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2010-10, Vol.20 (10), p.536-538 |
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| container_end_page | 538 |
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| container_issue | 10 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Gentile, G Dekker, R de Graaf, P Spirito, M Pelk, M J de Vreede, L C N Rejaei Salmassi, B |
| description | In this letter, we report, for the first time, a silicon-filled integrated waveguide based on a two mask integrated circuit (IC) process and substrate transfer technique. The fabrication process offers a high degree of control and repeatability on the device geometrical dimensions. Waveguide structures with cutoff frequencies of 35, 50, and 77 GHz were designed and fabricated. In the fundamental TE 10 -like operating mode, average losses as low as 0.10 dB/mm with a slow-wave factor of 2.5 were observed. The measurement results are in excellent agreement with HFSS simulations, validating the usability of these structures as a new component in mm-wave IC-designs. |
| doi_str_mv | 10.1109/LMWC.2010.2063420 |
| format | Article |
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The fabrication process offers a high degree of control and repeatability on the device geometrical dimensions. Waveguide structures with cutoff frequencies of 35, 50, and 77 GHz were designed and fabricated. In the fundamental TE 10 -like operating mode, average losses as low as 0.10 dB/mm with a slow-wave factor of 2.5 were observed. The measurement results are in excellent agreement with HFSS simulations, validating the usability of these structures as a new component in mm-wave IC-designs.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2010.2063420</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Circuit properties ; Coplanar waveguides ; Design. Technologies. Operation analysis. Testing ; Devices ; Electric, optical and optoelectronic circuits ; Electronic tubes, masers ; Electronics ; Exact sciences and technology ; Integrated circuits ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; Millimeter-wave ; Noise levels ; Optical waveguides ; Repeatability ; Reproducibility ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; silicon filled ; silicon-on-glass ; Simulation ; substrate integrated waveguide (SIW) ; substrate transfer ; Substrates ; Transmission line measurements ; Waveguide transitions ; Waveguides</subject><ispartof>IEEE microwave and wireless components letters, 2010-10, Vol.20 (10), p.536-538</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Oct 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-5d96600af40c2f705519c34e5bd3932250d0559885816b232cd3af29a18b8abd3</citedby><cites>FETCH-LOGICAL-c355t-5d96600af40c2f705519c34e5bd3932250d0559885816b232cd3af29a18b8abd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5560693$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5560693$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23335705$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gentile, G</creatorcontrib><creatorcontrib>Dekker, R</creatorcontrib><creatorcontrib>de Graaf, P</creatorcontrib><creatorcontrib>Spirito, M</creatorcontrib><creatorcontrib>Pelk, M J</creatorcontrib><creatorcontrib>de Vreede, L C N</creatorcontrib><creatorcontrib>Rejaei Salmassi, B</creatorcontrib><title>Silicon Filled Integrated Waveguides</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>In this letter, we report, for the first time, a silicon-filled integrated waveguide based on a two mask integrated circuit (IC) process and substrate transfer technique. The fabrication process offers a high degree of control and repeatability on the device geometrical dimensions. Waveguide structures with cutoff frequencies of 35, 50, and 77 GHz were designed and fabricated. In the fundamental TE 10 -like operating mode, average losses as low as 0.10 dB/mm with a slow-wave factor of 2.5 were observed. The measurement results are in excellent agreement with HFSS simulations, validating the usability of these structures as a new component in mm-wave IC-designs.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Coplanar waveguides</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic tubes, masers</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>Millimeter-wave</subject><subject>Noise levels</subject><subject>Optical waveguides</subject><subject>Repeatability</subject><subject>Reproducibility</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>silicon filled</subject><subject>silicon-on-glass</subject><subject>Simulation</subject><subject>substrate integrated waveguide (SIW)</subject><subject>substrate transfer</subject><subject>Substrates</subject><subject>Transmission line measurements</subject><subject>Waveguide transitions</subject><subject>Waveguides</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkMtKAzEUhoMoWKsPIG4KKq6mnpNMpslSitVCxYVKlyHNZEpKOlOTGcG3N0NLF67O7Tu3n5BrhDEiyMfF23I6ppBCCgXLKZyQAXIuMpwU-WnvM8yQgTwnFzFuADAXOQ7I3YfzzjT1aOa8t-VoXrd2HXSb3KX-sevOlTZekrNK-2ivDnZIvmbPn9PXbPH-Mp8-LTLDOG8zXsqiANBVDoZWE-AcpWG55auSSUYphzLlpBBcYLGijJqS6YpKjWIldIKG5GE_dxea787GVm1dNNZ7Xdumi0owRD6RVCby9h-5abpQp-MUQiHTOQJ6CveUCU2MwVZqF9xWh98EqV421cumetnUQbbUc3-YrKPRvgq6Ni4eGyljjKfXEnez55y19ljmvOjXsz9gpnJY</recordid><startdate>20101001</startdate><enddate>20101001</enddate><creator>Gentile, G</creator><creator>Dekker, R</creator><creator>de Graaf, P</creator><creator>Spirito, M</creator><creator>Pelk, M J</creator><creator>de Vreede, L C N</creator><creator>Rejaei Salmassi, B</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Testing</topic><topic>Devices</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic tubes, masers</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwaves</topic><topic>Millimeter-wave</topic><topic>Noise levels</topic><topic>Optical waveguides</topic><topic>Repeatability</topic><topic>Reproducibility</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>silicon filled</topic><topic>silicon-on-glass</topic><topic>Simulation</topic><topic>substrate integrated waveguide (SIW)</topic><topic>substrate transfer</topic><topic>Substrates</topic><topic>Transmission line measurements</topic><topic>Waveguide transitions</topic><topic>Waveguides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gentile, G</creatorcontrib><creatorcontrib>Dekker, R</creatorcontrib><creatorcontrib>de Graaf, P</creatorcontrib><creatorcontrib>Spirito, M</creatorcontrib><creatorcontrib>Pelk, M J</creatorcontrib><creatorcontrib>de Vreede, L C N</creatorcontrib><creatorcontrib>Rejaei Salmassi, B</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gentile, G</au><au>Dekker, R</au><au>de Graaf, P</au><au>Spirito, M</au><au>Pelk, M J</au><au>de Vreede, L C N</au><au>Rejaei Salmassi, B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon Filled Integrated Waveguides</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2010-10-01</date><risdate>2010</risdate><volume>20</volume><issue>10</issue><spage>536</spage><epage>538</epage><pages>536-538</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>In this letter, we report, for the first time, a silicon-filled integrated waveguide based on a two mask integrated circuit (IC) process and substrate transfer technique. The fabrication process offers a high degree of control and repeatability on the device geometrical dimensions. Waveguide structures with cutoff frequencies of 35, 50, and 77 GHz were designed and fabricated. In the fundamental TE 10 -like operating mode, average losses as low as 0.10 dB/mm with a slow-wave factor of 2.5 were observed. The measurement results are in excellent agreement with HFSS simulations, validating the usability of these structures as a new component in mm-wave IC-designs.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2010.2063420</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2010-10, Vol.20 (10), p.536-538 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Circuit properties Coplanar waveguides Design. Technologies. Operation analysis. Testing Devices Electric, optical and optoelectronic circuits Electronic tubes, masers Electronics Exact sciences and technology Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter-wave Noise levels Optical waveguides Repeatability Reproducibility Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon silicon filled silicon-on-glass Simulation substrate integrated waveguide (SIW) substrate transfer Substrates Transmission line measurements Waveguide transitions Waveguides |
| title | Silicon Filled Integrated Waveguides |
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