Silicon Filled Integrated Waveguides

In this letter, we report, for the first time, a silicon-filled integrated waveguide based on a two mask integrated circuit (IC) process and substrate transfer technique. The fabrication process offers a high degree of control and repeatability on the device geometrical dimensions. Waveguide structures with cutoff frequencies of 35, 50, and 77 GHz were designed and fabricated. In the fundamental TE 10 -like operating mode, average losses as low as 0.10 dB/mm with a slow-wave factor of 2.5 were observed. The measurement results are in excellent agreement with HFSS simulations, validating the usability of these structures as a new component in mm-wave IC-designs.