High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped S elect-Gate SONOS in NOR-Type Flash Memory

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Veröffentlicht in:	IEEE transactions on electron devices 2010, Vol.57 (9), p.2335-2338
Hauptverfasser:	WANG, Kuan-Ti, CHAO, Tien-Sheng, LIN, Chih-Hung, CHEN, Hwi-Huang, WU, Woei-Cherng, YANG, Wen-Luh, LEE, Chien-Hsing, HSIEH, Tsung-Min, LIOU, Jhyy-Cheng, WANG, Shen-De, CHEN, Tzu-Ping, CHEN, Chien-Hung
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Compound structure devices Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information
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ISSN:	0018-9383 1557-9646