Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

Broad dispersions of operation parameters are generally observed with continuous resistive switching. In this letter, we explore a prototype resistive random access memory (RRAM) device for switching uniformity improvement. Compared with Al/Cu x O/Cu structure, by introducing a thin phase-change Ge...

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Veröffentlicht in:	IEEE electron device letters 2010-09, Vol.31 (9), p.978-980
Hauptverfasser:	Lv, Hangbing, Wan, Haijun, Tang, Tingao
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Applied sciences Conducting materials Confined filament Copper Design. Technologies. Operation analysis. Testing Devices Dispersions Electrodes Electronics Exact sciences and technology Germanium Inorganic materials Integrated circuits Integrated circuits by function (including memories and processors) Material storage Microelectronics Oxidation Random access memory resistive random access memory (RRAM) resistive switching Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switching Tellurium Thin films Variability X-ray scattering
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Zusammenfassung:	Broad dispersions of operation parameters are generally observed with continuous resistive switching. In this letter, we explore a prototype resistive random access memory (RRAM) device for switching uniformity improvement. Compared with Al/Cu x O/Cu structure, by introducing a thin phase-change Ge 2 Sb 2 Te 5 (GST) film between Cu x O and Al top electrode, the device exhibits much better resistive hysteresis and switching uniformity. A combined filamentary conduction model is proposed to clarify the role of GST layer on the resistive switching stabilization.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2010.2055534