Optical and transport properties of Ti-doped In2O3 thin films prepared by electron beam physical vapour deposition

Ti‐doped In2O3 (ITiO) thin films have been prepared by electron beam physical vapour deposition (EB‐PVD). Their optical and electrical properties are studied for the obtained compositions. After oxygen annealing all samples show excellent optical transparence; additionally, maximum values for conduc...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2010-07, Vol.207 (7), p.1549-1553
Hauptverfasser:	Sánchez-Marcos, J., Ochando, I. M., Galindo, R. Escobar, Martínez-Morillas, R., Prieto, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties doping electrical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology ITO Low-field transport and mobility piezoresistance optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other semiconductors Physics PVD
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Zusammenfassung:	Ti‐doped In2O3 (ITiO) thin films have been prepared by electron beam physical vapour deposition (EB‐PVD). Their optical and electrical properties are studied for the obtained compositions. After oxygen annealing all samples show excellent optical transparence; additionally, maximum values for conductivity are obtained for samples with titanium contents near 6 at.%, with typical resistivity values of 4 × 10−5 Ω cm. Finally, the band‐gap energy evolution is studied for the set of samples.
ISSN:	1862-6300 1862-6319
DOI:	10.1002/pssa.200983717