Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 1998-07, Vol.31 (13), p.1499-1503 |
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| container_end_page | 1503 |
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| container_issue | 13 |
| container_start_page | 1499 |
| container_title | Journal of physics. D, Applied physics |
| container_volume | 31 |
| creator | Lysenko, V S Tyagulski, I P Gomeniuk, Y V Osiyuk, I N Tkach, I I |
| description | |
| doi_str_mv | 10.1088/0022-3727/31/13/001 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0022-3727 |
| ispartof | Journal of physics. D, Applied physics, 1998-07, Vol.31 (13), p.1499-1503 |
| issn | 0022-3727 1361-6463 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_2303115 |
| source | Institute of Physics Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Impurity and defect levels energy states of adsorbed species Physics Surface and interface electron states |
| title | Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction |
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