Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 1998-07, Vol.31 (13), p.1499-1503
Hauptverfasser:	Lysenko, V S, Tyagulski, I P, Gomeniuk, Y V, Osiyuk, I N, Tkach, I I
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Impurity and defect levels energy states of adsorbed species Physics Surface and interface electron states
Online-Zugang:	Volltext
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