Physical Properties of AIGaN/GaN Heterostructures Grown on Vicinal Substrates: Group III Nitrides, Silicon Carbide, and Zinc Oxide

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Veröffentlicht in:	Journal of electronic materials 2010, Vol.39 (5), p.504-516
Hauptverfasser:	GRENKO, J. A, REYNOLDS, C. L, BARLAGE, D. W, JOHNSON, M. A. L, LAPPI, S. E, EBERT, C. W, PREBLE, E. A, PASKOVA, T, EVANS, K. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Other semiconductors Physics Specific materials Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology
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ISSN:	0361-5235 1543-186X