Schottky barrier contacts formed on polar and nonpolar MgxZn1−xO films grown by remote plasma enhanced MOCVD

The growth of MgxZn1−xO films of both polar and nonpolar orientation in was successfully carried out by remote‐plasma‐enhanced MOCVD (RPE‐MOCVD) technique. The polar face of as‐grown film had a vertically aligned columnar growth with respect to the sapphire (11–20) substrate. These columns had an average diameter of about 40 nm. In contrast, the nonpolar face of as‐grown film had a sword‐shape lying with an average width of 250 nm on the sapphire (10–12) substrate. Au/Schottky diodes (SDs) were fabricated on both polar face of c‐plane (0001) MgxZn1−xO and nonpolar face of a‐plane (11–20) MgxZn1−xO. A rectifying behavior had been achieved and a series resistance was increased with Mg contents in both polar and nonpolar diodes. A residual electron concentration was decreased with the Mg content from 3 × 1017 cm−3 at x = 0 to 1.2 × 1016 cm−3 at x = 0.18 in the case of nonpolar films.