Photoluminescence spectra of high temperature vacuum annealed porous silicon

The photoluminescence (PL) spectra of porous silicon layers annealed for 15 to 180 sec in vacuum at temperatures above 800/spl deg/C are presented. The experimental spectra consist of two main PL bands at 1.8 eV and 2.2 eV. The 2.2 eV band is independent of the annealing time and origins from silico...

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Bibliographische Detailangaben

Hauptverfasser:	Dimitrov, D.B., Papadimitriou, D., Beshkov, G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Circuits Condensed matter: electronic structure, electrical, magnetic, and optical properties Etching Exact sciences and technology Hydrogen Kinetic theory Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Photonic band gap Physics Porous materials Silicon Temperature Tires
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