Photoluminescence spectra of high temperature vacuum annealed porous silicon

Photoluminescence spectra of high temperature vacuum annealed porous silicon

The photoluminescence (PL) spectra of porous silicon layers annealed for 15 to 180 sec in vacuum at temperatures above 800/spl deg/C are presented. The experimental spectra consist of two main PL bands at 1.8 eV and 2.2 eV. The 2.2 eV band is independent of the annealing time and origins from silico...

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Hauptverfasser: Dimitrov, D.B., Papadimitriou, D., Beshkov, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Circuits
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Etching
Exact sciences and technology
Hydrogen
Kinetic theory
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Photonic band gap
Physics
Porous materials
Silicon
Temperature
Tires
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Zusammenfassung:The photoluminescence (PL) spectra of porous silicon layers annealed for 15 to 180 sec in vacuum at temperatures above 800/spl deg/C are presented. The experimental spectra consist of two main PL bands at 1.8 eV and 2.2 eV. The 2.2 eV band is independent of the annealing time and origins from silicon nanocrystallites. The 1.8 eV band decreases with increasing annealing time following second-order kinetics, typical for silicon dihydride decomposition.
DOI:10.1109/ICMEL.1997.625188