Some characteristics of amorphous semiconductors of the As-S-Se-Te-I system
The elements of technological process are presented yielding some new materials from the As-S-Se-Te-I system. The study was made using the cut (As/sub 2/S/sub 3/)/sub x/(AsSe/sub 0.5/Te/sub 0.5/I)/sub 100-x/ with the aim of characterizing the role of tellurium as the selenium substitution in the pse...
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| creator | Lukic, S.R. Khiminets, V.V. Petrovic, D.M. Garic, M.M. Avramov, M.I. |
| description | The elements of technological process are presented yielding some new materials from the As-S-Se-Te-I system. The study was made using the cut (As/sub 2/S/sub 3/)/sub x/(AsSe/sub 0.5/Te/sub 0.5/I)/sub 100-x/ with the aim of characterizing the role of tellurium as the selenium substitution in the pseudobinary system As/sub 2/S/sub 3/-AsSeI. Densities of the obtained amorphous samples were determined and their relationship with the composition was established. The measured values of electrical conductivity at room temperature indicate involvement of the factors causing significant changes of this physical parameter. |
| doi_str_mv | 10.1109/ICMEL.1997.625215 |
| format | Conference Proceeding |
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The study was made using the cut (As/sub 2/S/sub 3/)/sub x/(AsSe/sub 0.5/Te/sub 0.5/I)/sub 100-x/ with the aim of characterizing the role of tellurium as the selenium substitution in the pseudobinary system As/sub 2/S/sub 3/-AsSeI. Densities of the obtained amorphous samples were determined and their relationship with the composition was established. The measured values of electrical conductivity at room temperature indicate involvement of the factors causing significant changes of this physical parameter.</description><identifier>ISBN: 078033664X</identifier><identifier>ISBN: 9780780336643</identifier><identifier>DOI: 10.1109/ICMEL.1997.625215</identifier><language>eng</language><publisher>New York NY: IEEE</publisher><subject>Amorphous materials ; Annealing ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity measurement ; Conductivity of specific materials ; Cooling ; Disordered solids ; Electric variables measurement ; Electronic transport in condensed matter ; Exact sciences and technology ; Glass ; Heating ; Physics ; Solids ; Tellurium ; Temperature</subject><ispartof>1997 21st International Conference on Microelectronics. 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The measured values of electrical conductivity at room temperature indicate involvement of the factors causing significant changes of this physical parameter.</description><subject>Amorphous materials</subject><subject>Annealing</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity measurement</subject><subject>Conductivity of specific materials</subject><subject>Cooling</subject><subject>Disordered solids</subject><subject>Electric variables measurement</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Glass</subject><subject>Heating</subject><subject>Physics</subject><subject>Solids</subject><subject>Tellurium</subject><subject>Temperature</subject><isbn>078033664X</isbn><isbn>9780780336643</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9kDFPwzAUhC0hJKD0B8CUgdXB9nt27LGqClQEMaRIbJVxbNWoaSI7HfrviSjiltPpO91whNxxVnLOzON6-baqS25MVSohBZcX5IZVmgEohZ9XZJ7zN5uEKJHpa_La9J0v3M4m60afYh6jy0UfCtv1adj1x1xk30XXH9qjG_v0y8adLxaZNrTxdOPpusinPPrullwGu89-_ucz8vG02ixfaP3-vF4uaho5wEgBmJVBVq0JWmjk6DQaB8ihlQpUi6hRV1OQQqH8YqBVcKJFboPRFfMwIw_n3cFmZ_ch2YOLeTuk2Nl02gpRGWlgqt2fa9F7_0_Pr8APU6NWWw</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Lukic, S.R.</creator><creator>Khiminets, V.V.</creator><creator>Petrovic, D.M.</creator><creator>Garic, M.M.</creator><creator>Avramov, M.I.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>IQODW</scope></search><sort><creationdate>1997</creationdate><title>Some characteristics of amorphous semiconductors of the As-S-Se-Te-I system</title><author>Lukic, S.R. ; Khiminets, V.V. ; Petrovic, D.M. ; Garic, M.M. ; Avramov, M.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i133t-330a5f57d9f828414c849c3413d5636d4484873d552645b0386fc2d41af9870e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Amorphous materials</topic><topic>Annealing</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity measurement</topic><topic>Conductivity of specific materials</topic><topic>Cooling</topic><topic>Disordered solids</topic><topic>Electric variables measurement</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Glass</topic><topic>Heating</topic><topic>Physics</topic><topic>Solids</topic><topic>Tellurium</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Lukic, S.R.</creatorcontrib><creatorcontrib>Khiminets, V.V.</creatorcontrib><creatorcontrib>Petrovic, D.M.</creatorcontrib><creatorcontrib>Garic, M.M.</creatorcontrib><creatorcontrib>Avramov, M.I.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lukic, S.R.</au><au>Khiminets, V.V.</au><au>Petrovic, D.M.</au><au>Garic, M.M.</au><au>Avramov, M.I.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Some characteristics of amorphous semiconductors of the As-S-Se-Te-I system</atitle><btitle>1997 21st International Conference on Microelectronics. Proceedings</btitle><stitle>ICMEL</stitle><date>1997</date><risdate>1997</risdate><volume>1</volume><spage>201</spage><epage>203 vol.1</epage><pages>201-203 vol.1</pages><isbn>078033664X</isbn><isbn>9780780336643</isbn><abstract>The elements of technological process are presented yielding some new materials from the As-S-Se-Te-I system. The study was made using the cut (As/sub 2/S/sub 3/)/sub x/(AsSe/sub 0.5/Te/sub 0.5/I)/sub 100-x/ with the aim of characterizing the role of tellurium as the selenium substitution in the pseudobinary system As/sub 2/S/sub 3/-AsSeI. Densities of the obtained amorphous samples were determined and their relationship with the composition was established. The measured values of electrical conductivity at room temperature indicate involvement of the factors causing significant changes of this physical parameter.</abstract><cop>New York NY</cop><pub>IEEE</pub><doi>10.1109/ICMEL.1997.625215</doi><tpages>3</tpages></addata></record> |
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| identifier | ISBN: 078033664X |
| ispartof | 1997 21st International Conference on Microelectronics. Proceedings, 1997, Vol.1, p.201-203 vol.1 |
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| language | eng |
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| subjects | Amorphous materials Annealing Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity measurement Conductivity of specific materials Cooling Disordered solids Electric variables measurement Electronic transport in condensed matter Exact sciences and technology Glass Heating Physics Solids Tellurium Temperature |
| title | Some characteristics of amorphous semiconductors of the As-S-Se-Te-I system |
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