Some characteristics of amorphous semiconductors of the As-S-Se-Te-I system

The elements of technological process are presented yielding some new materials from the As-S-Se-Te-I system. The study was made using the cut (As/sub 2/S/sub 3/)/sub x/(AsSe/sub 0.5/Te/sub 0.5/I)/sub 100-x/ with the aim of characterizing the role of tellurium as the selenium substitution in the pse...

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Hauptverfasser:	Lukic, S.R., Khiminets, V.V., Petrovic, D.M., Garic, M.M., Avramov, M.I.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amorphous materials Annealing Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity measurement Conductivity of specific materials Cooling Disordered solids Electric variables measurement Electronic transport in condensed matter Exact sciences and technology Glass Heating Physics Solids Tellurium Temperature
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Beschreibung
Zusammenfassung:	The elements of technological process are presented yielding some new materials from the As-S-Se-Te-I system. The study was made using the cut (As/sub 2/S/sub 3/)/sub x/(AsSe/sub 0.5/Te/sub 0.5/I)/sub 100-x/ with the aim of characterizing the role of tellurium as the selenium substitution in the pseudobinary system As/sub 2/S/sub 3/-AsSeI. Densities of the obtained amorphous samples were determined and their relationship with the composition was established. The measured values of electrical conductivity at room temperature indicate involvement of the factors causing significant changes of this physical parameter.
DOI:	10.1109/ICMEL.1997.625215