fmax Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2009-12, Vol.30 (12), p.1323-1325
Hauptverfasser:	JHON, Hee-Sauk, LEE, Jae-Hong, LEE, Jaeho, OH, Byoungchan, SONG, Ickhyun, YEONAM YUN, PARK, Byung-Gook, LEE, Jong-Duk, SHIN, Hyungcheol
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	1325
container_issue	12
container_start_page	1323
container_title	IEEE electron device letters
container_volume	30
creator	JHON, Hee-Sauk LEE, Jae-Hong LEE, Jaeho OH, Byoungchan SONG, Ickhyun YEONAM YUN PARK, Byung-Gook LEE, Jong-Duk SHIN, Hyungcheol
description
doi_str_mv	10.1109/LED.2009.2032249
format	Article
fullrecord	<record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_22492431</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22492431</sourcerecordid><originalsourceid>FETCH-LOGICAL-p100t-969cbe31b10a59b65403b8f4f21e1df9c7efbb19580d1d36319fbd4ff73844fe3</originalsourceid><addsrcrecordid>eNotkEtLxDAUhYMoOI7uXWbjsuO9TfrIUmrVgcoI1vWQpIlE-iKJw8y_t6KbczYfh49DyC3CBhHEfVM_blIAsQRLUy7OyAqzrEwgy9k5WUHBMWEI-SW5CuELADkv-Iq0dpBHuh1mPx3MYMZI1YlW0xj91Pdu_KT1MXo3Bqfpm_QyuOh0oG6klfP628WkMQfT09fdO229XLgQJ39NLqzsg7n57zX5eKrb6iVpds_b6qFJZgSIiciFVoahQpCZUHnGganScpuiwc4KXRirFIqshA47ljMUVnXc2oKVnFvD1uTub3eWQcveLgLahf3s3SD9af97Q8oZsh8UclQr</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>fmax Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor</title><source>IEEE Electronic Library (IEL)</source><creator>JHON, Hee-Sauk ; LEE, Jae-Hong ; LEE, Jaeho ; OH, Byoungchan ; SONG, Ickhyun ; YEONAM YUN ; PARK, Byung-Gook ; LEE, Jong-Duk ; SHIN, Hyungcheol</creator><creatorcontrib>JHON, Hee-Sauk ; LEE, Jae-Hong ; LEE, Jaeho ; OH, Byoungchan ; SONG, Ickhyun ; YEONAM YUN ; PARK, Byung-Gook ; LEE, Jong-Duk ; SHIN, Hyungcheol</creatorcontrib><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2009.2032249</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electronics ; Exact sciences and technology ; Integrated circuits ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE electron device letters, 2009-12, Vol.30 (12), p.1323-1325</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22492431$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JHON, Hee-Sauk</creatorcontrib><creatorcontrib>LEE, Jae-Hong</creatorcontrib><creatorcontrib>LEE, Jaeho</creatorcontrib><creatorcontrib>OH, Byoungchan</creatorcontrib><creatorcontrib>SONG, Ickhyun</creatorcontrib><creatorcontrib>YEONAM YUN</creatorcontrib><creatorcontrib>PARK, Byung-Gook</creatorcontrib><creatorcontrib>LEE, Jong-Duk</creatorcontrib><creatorcontrib>SHIN, Hyungcheol</creatorcontrib><title>fmax Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor</title><title>IEEE electron device letters</title><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotkEtLxDAUhYMoOI7uXWbjsuO9TfrIUmrVgcoI1vWQpIlE-iKJw8y_t6KbczYfh49DyC3CBhHEfVM_blIAsQRLUy7OyAqzrEwgy9k5WUHBMWEI-SW5CuELADkv-Iq0dpBHuh1mPx3MYMZI1YlW0xj91Pdu_KT1MXo3Bqfpm_QyuOh0oG6klfP628WkMQfT09fdO229XLgQJ39NLqzsg7n57zX5eKrb6iVpds_b6qFJZgSIiciFVoahQpCZUHnGganScpuiwc4KXRirFIqshA47ljMUVnXc2oKVnFvD1uTub3eWQcveLgLahf3s3SD9af97Q8oZsh8UclQr</recordid><startdate>200912</startdate><enddate>200912</enddate><creator>JHON, Hee-Sauk</creator><creator>LEE, Jae-Hong</creator><creator>LEE, Jaeho</creator><creator>OH, Byoungchan</creator><creator>SONG, Ickhyun</creator><creator>YEONAM YUN</creator><creator>PARK, Byung-Gook</creator><creator>LEE, Jong-Duk</creator><creator>SHIN, Hyungcheol</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>200912</creationdate><title>fmax Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor</title><author>JHON, Hee-Sauk ; LEE, Jae-Hong ; LEE, Jaeho ; OH, Byoungchan ; SONG, Ickhyun ; YEONAM YUN ; PARK, Byung-Gook ; LEE, Jong-Duk ; SHIN, Hyungcheol</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p100t-969cbe31b10a59b65403b8f4f21e1df9c7efbb19580d1d36319fbd4ff73844fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JHON, Hee-Sauk</creatorcontrib><creatorcontrib>LEE, Jae-Hong</creatorcontrib><creatorcontrib>LEE, Jaeho</creatorcontrib><creatorcontrib>OH, Byoungchan</creatorcontrib><creatorcontrib>SONG, Ickhyun</creatorcontrib><creatorcontrib>YEONAM YUN</creatorcontrib><creatorcontrib>PARK, Byung-Gook</creatorcontrib><creatorcontrib>LEE, Jong-Duk</creatorcontrib><creatorcontrib>SHIN, Hyungcheol</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JHON, Hee-Sauk</au><au>LEE, Jae-Hong</au><au>LEE, Jaeho</au><au>OH, Byoungchan</au><au>SONG, Ickhyun</au><au>YEONAM YUN</au><au>PARK, Byung-Gook</au><au>LEE, Jong-Duk</au><au>SHIN, Hyungcheol</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>fmax Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor</atitle><jtitle>IEEE electron device letters</jtitle><date>2009-12</date><risdate>2009</risdate><volume>30</volume><issue>12</issue><spage>1323</spage><epage>1325</epage><pages>1323-1325</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/LED.2009.2032249</doi><tpages>3</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0741-3106
ispartof	IEEE electron device letters, 2009-12, Vol.30 (12), p.1323-1325
issn	0741-3106 1558-0563
language	eng
recordid	cdi_pascalfrancis_primary_22492431
source	IEEE Electronic Library (IEL)
subjects	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	fmax Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T06%3A19%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=fmax%20Improvement%20by%20Controlling%20Extrinsic%20Parasitics%20in%20Circuit-Level%20MOS%20Transistor&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=JHON,%20Hee-Sauk&rft.date=2009-12&rft.volume=30&rft.issue=12&rft.spage=1323&rft.epage=1325&rft.pages=1323-1325&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2009.2032249&rft_dat=%3Cpascalfrancis%3E22492431%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true