Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

We report a study on the surface-leakage current in GaN/InGaN double heterojunction bipolar transistors (DHBTs) that are grown on a sapphire substrate. Surface-leakage-current densities on an unpassivated DHBT are 9.6 times 10 -5 - 5.8 times 10 -4 A/cm for JC = 0.5-50 A/cm 2 . A fabricated n-p-n GaN...

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Veröffentlicht in:	IEEE electron device letters 2009-11, Vol.30 (11), p.1119-1121
Hauptverfasser:	Shyh-Chiang Shen, Yi-Che Lee, Hee-Jin Kim, Yun Zhang, Suk Choi, Dupuis, R.D., Jae-Hyun Ryou
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Applied sciences Contact resistance Costs Density Double heterojunction bipolar transistors Electric potential Electronics Exact sciences and technology Fabrication Gain Gallium nitride Gallium nitrides GaN/InGaN graded emitter Heterojunction bipolar transistors heterojunction bipolar transistors (HBTs) Indium gallium nitrides Photonic band gap Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Transistors Voltage
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Zusammenfassung:	We report a study on the surface-leakage current in GaN/InGaN double heterojunction bipolar transistors (DHBTs) that are grown on a sapphire substrate. Surface-leakage-current densities on an unpassivated DHBT are 9.6 times 10 -5 - 5.8 times 10 -4 A/cm for JC = 0.5-50 A/cm 2 . A fabricated n-p-n GaN/InGaN DHBT shows the common-emitter dc current gain of 42, the collector-current density of 5.2 kA/cm 2 , and the common-emitter breakdown voltage (BV CEO ) of 75 V.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2009.2030373