Photoluminescence study of nitrogen effects on confined states in GaAs1-xNx/GaAs quantum wells

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Bibliographische Detailangaben
Veröffentlicht in:	European physical journal. Applied physics 2009-09, Vol.47 (3)
Hauptverfasser:	DHIFALLAH, I, ALOULOU, S, BARDAOUI, A, HARMAND, J. C, CHTOUROU, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Quantum wells Radiation effects on specific materials Semiconductors Structure of solids and liquids crystallography
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