Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AIN on Si substrates

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	OHACHI, T, YAMABE, N, SHIMOMURA, H, SHIMAMURA, T, ARIYADA, O, WADA, M
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diffusion in solids Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Theory and models of film growth Transport properties of condensed matter (nonelectronic)
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:
ISSN:	0022-0248 1873-5002