The Inductance Enhancement Study of Spiral Inductor Using Ni-AAO Nanocomposite Core

The letter presents the fabrication and characterization of on-chip spiral inductors with Ni-anodic alumina oxide (Ni-AAO) nanocomposite core. Ni nanorods with 70 nm diameter are deposited and isolated in an AAO matrix to form a layer of nanocomposite on silicon substrate. About 3% inductance enhanc...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on nanotechnology 2009-05, Vol.8 (3), p.281-285
Hauptverfasser:	Hsu, M.C., Chao, T.Y., Cheng, Y.T., Liu, C.M., Chen, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodic alumina oxide (AAO) Applied sciences Cross-disciplinary physics: materials science rheology Design. Technologies. Operation analysis. Testing Eddy currents Electronics Exact sciences and technology Frequency Inductance Inductors Integrated circuits Magnetic cores Magnetic devices Magnetic materials Magnetic resonance Materials science Nanoscale materials and structures: fabrication and characterization Ni nanorods Ni-anodic alumina oxide (Ni-AAO) nanocomposite core Other topics in nanoscale materials and structures Performance loss Physics quality ( Q ) factor Radiofrequency integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices spiral inductor Spirals
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The letter presents the fabrication and characterization of on-chip spiral inductors with Ni-anodic alumina oxide (Ni-AAO) nanocomposite core. Ni nanorods with 70 nm diameter are deposited and isolated in an AAO matrix to form a layer of nanocomposite on silicon substrate. About 3% inductance enhancement to the inductor with the nanocomposite core has been observed and the enhancement can be kept up more than 6 GHz. Because the proposed inductance enhancement scheme using ferromagnetic-AAO-based nanocomposite as inductor core employs a CMOS-compatible fabrication process with the characteristics that can be further improved, it is our belief that the scheme has a great potential application for future radio frequency integrated circuitry (RFIC) manufacture.
ISSN:	1536-125X 1941-0085
DOI:	10.1109/TNANO.2009.2015758