The effect of the intrinsic layer on the reliability of nitride-based p–i–n photodetectors
This study successfully proves that the reliability of nitride-based p-i-n photodetectors (PDs) is highly sensitive to the thickness of intrinsic GaN layers. Results are based on i-GaN layers of 0.25 mum, 0.4 mum and 0.5 mum thicknesses. After current ageing, the p-i-n PDs with thin i-layers exhibit...
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Veröffentlicht in: | Semiconductor science and technology 2009-05, Vol.24 (5), p.055004-055004 (5), Article 055004 |
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Sprache: | eng |
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