Diode side-pumped actively Q-switched Nd:YAG/SrWO4 Raman laser with high average output power of over 10 W at 1180 nm

A diode‐side‐pumped actively Q‐switched Nd:YAG/SrWO4 intracavity Raman laser has been demonstrated, in which a Nd:YAG module is used as the fundamental laser source and a SrWO4 crystal is used as the Raman active medium to generate first‐Stokes laser at 1180 nm. A convexplane cavity is employed to m...

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Veröffentlicht in:	Laser physics letters 2009-05, Vol.6 (5), p.363-366
Hauptverfasser:	Chen, X.H., Zhang, X.Y., Wang, Q.P., Li, P., Li, S.T., Cong, Z.H., Liu, Z.J., Fan, S.Z., Zhang, H.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Diode-pumped lasers Exact sciences and technology Fundamental areas of phenomenology (including applications) Laser optical systems: design and operation Lasers Optics Physics Q-switching Raman lasers
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Beschreibung
Zusammenfassung:	A diode‐side‐pumped actively Q‐switched Nd:YAG/SrWO4 intracavity Raman laser has been demonstrated, in which a Nd:YAG module is used as the fundamental laser source and a SrWO4 crystal is used as the Raman active medium to generate first‐Stokes laser at 1180 nm. A convexplane cavity is employed to make the laser in a stable and efficient work under high pump power. At a LD pump power of 164 W and a pulse repetition frequency of 20 kHz, an average output power of 10.5 W at 1180 nm is obtained. (© 2009 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA)
ISSN:	1612-2011 1612-202X
DOI:	10.1002/lapl.200810142