Ultralow Current Measurements With Silicon-on-Sapphire Integrator Circuits

Ultralow Current Measurements With Silicon-on-Sapphire Integrator Circuits

This letter reports the results on measurements and modeling of the ultralow current measurement capability of a silicon-on-sapphire current integrator circuit. We have tested the lowest possible current measurable with the device and the noise performance with picoampere input currents. The device...

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Veröffentlicht in:IEEE electron device letters 2009-03, Vol.30 (3), p.258-260
Hauptverfasser: Culurciello, E., Montanaro, H., Dongsoo Kim
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bandwidth
Biomedical equipment
Biomedical measurements
Capacitance
circuit noise
Circuit properties
Circuits
Converters
Counting circuits
Current measurement
Devices
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Frequency
Instruments
Integrated circuit measurements
Integrators
Noise
Pulse amplifiers
Pulse measurements
Signal convertors
Voltage
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Beschreibung
Zusammenfassung:This letter reports the results on measurements and modeling of the ultralow current measurement capability of a silicon-on-sapphire current integrator circuit. We have tested the lowest possible current measurable with the device and the noise performance with picoampere input currents. The device is capable of resolving subpicoampere currents with an rms noise of 350 fA in a 110-Hz bandwidth. The device is also capable of digitally measuring currents up to 100 muA by employing a pulse-based A/D converters.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2010564