Energy distribution of bombarding ions in plasma etching of dielectrics

In plasma etching for microelectronics fabrication, a sheath electric field accelerates ions into the substrate so they strike at normal incidence, contributing energy and reactive species to enable anisotropic etch profiles. The energy of the bombarding ions is typically controlled coarsely with a...

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Veröffentlicht in:	Plasma sources science & technology 2009-05, Vol.18 (2), p.025009-025009 (8)
Hauptverfasser:	Buzzi, F L, Ting, Y-H, Wendt, A E
Format:	Artikel
Sprache:	eng
Schlagworte:	Etching and cleaning Exact sciences and technology Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications
Online-Zugang:	Volltext
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